Increase of Self-Oscillation and Transformation Frequencies in THz Diodes

Pavelyev, D. G.; Васильев, А. П.; Козлов, В. А.; Obolenskaya, E. S.; Obolensky, S. V.; Ustinov, V. M.

doi:10.1109/tthz.2017.2785043

Cited by 9 publications

(3 citation statements)

References 11 publications

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“…The superlattice parametric oscillators [ 18 ], also known as superlattice multipliers [ 21 , 22 ], are devices based on heavily doped GaAs/AlGaAs superlattices that provide very effective frequency multiplication of a microwave pump field [ 23 ], but do not produce a sub-harmonic output. It is also known that with variation in DC bias, the superlattice multiplier can switch to the operational mode of the high-field domain propagation, supporting the generation of high-frequency radiation due to the Gunn effect [ 24 ].…”

Section: Introductionmentioning

confidence: 99%

Coexistence of Bloch and Parametric Mechanisms of High-Frequency Gain in Doped Superlattices

et al. 2023

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The detailed theoretical study of high-frequency signal gain, when a probe microwave signal is comparable to the AC pump electric field in a semiconductor superlattice, is presented. We identified conditions under which a doped superlattice biased by both DC and AC fields can generate or amplify high-frequency radiation composed of harmonics, half-harmonics, and fractional harmonics. Physical mechanisms behind the effects are discussed. It is revealed that in a general case, the amplification mechanism in superlattices is determined by the coexistence of both the phase-independent Bloch and phase-dependent parametric gain mechanisms. The interplay and contribution of these gain mechanisms can be adjusted by the sweeping AC pump strength and leveraging a proper phase between the pump and strong probe electric fields. Notably, a transition from the Bloch gain to the parametric gain, often naturally occurring as the amplitude of the amplified signal field grows, can facilitate an effective method of fractional harmonic generation in DC–AC-driven superlattices. The study also uncovers that the pure parametric generation of the fractional harmonics can be initiated via their ignition by switching the DC pump electric field. The findings open a promising avenue for the advancement of new miniature GHz–THz frequency generators, amplifiers, and dividers operating at room temperature.

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Section: Introductionmentioning

confidence: 99%

Coexistence of Bloch and Parametric Mechanisms of High-Frequency Gain in Doped Superlattices

et al. 2023

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“…Такие диоды имеют высокие предельные частоты и необходимые экспериментальные характеристики, однако их радиационная стойкость еще не изучалась. В [7][8][9][10][11] нами экспериментально исследовались диоды на основе 6-, 18-и 30-периодных GaAs/AlAs-сверхрешеток (СР), были определены характеристики омических контактов, измерены вольт-амперные характеристики, проведено моделирование транспорта электронов в исследуемых диодах.…”

Section: Introductionunclassified

“…1. Конструкция исследуемой структуры [7,11]. Меткой " SL" и штриховкой отмечена рабочая область диода со сверхрешеткой, в которой реализуется большая плотность тока.…”

Section: Introductionunclassified

Радиационная стойкость терагерцовых диодов на основе GaAs/AlAs-сверхрешеток

Pavel'ev¹,

Васильев²,

Козлов³

et al. 2018

Физика И Техника Полупроводников

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Впервые теоретически и экспериментально исследована радиационная стойкость к гамма-нейтронному облучению (∼ 1 МэВ) диодов на основе симметричных GaAs/AlAs 30-периодных сверхрешеток. В расчетах использованы модельные зонная диаграмма и эквивалентная схема исследуемой структуры. Расчеты проведены в квазигидродинамическом приближении с учетом разогрева исследуемых диодов протекающим током. Результаты расчетов ВАХ и предельных частот работы диодов до и после гамма-нейтронного облучения хорошо коррелируют с экспериментальными данными.

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Acceptor and band states in quantum wells in multiband model

Vinnichenko

Makhov

Sofronov

et al. 2019

J. Phys.: Conf. Ser.

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We developed the framework for numerical calculation of the valence band dispersion in quantum well structures and the energy spectrum of the shallow acceptor in QWs. We used the finite-difference method to quantize the Luttinger-Kohn Hamiltonian and the decomposition of the impurity potential over the eigenstates of the Luttinger-Kohn Hamiltonian with the QW profile to obtain the acceptor states energies and wavefunction in k → -space. Developed approach allows one to calculate the energies of the acceptor states with spherical symmetry for an arbitrary QW potential profile with the coordinate-dependent material parameters.

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Increase of Self-Oscillation and Transformation Frequencies in THz Diodes

Cited by 9 publications

References 11 publications

Coexistence of Bloch and Parametric Mechanisms of High-Frequency Gain in Doped Superlattices

Coexistence of Bloch and Parametric Mechanisms of High-Frequency Gain in Doped Superlattices

Радиационная стойкость терагерцовых диодов на основе GaAs/AlAs-сверхрешеток

Acceptor and band states in quantum wells in multiband model

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