On the Rates of Oxidation of Silicon and of Silicon Carbide in Oxygen, and Correlation with Permeability of Silica Glass.

Motzfeldt, K.; Nyberg, Klas; Ekbom, K.; Borgström, B.

doi:10.3891/acta.chem.scand.18-1596

Cited by 97 publications

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“…The oxidation rate constants of silicon and SiC are compared in Table V, using data from the present work as well as results from the literature. As Motzfeldt has stated, 38 one expects the parabolic rate constants to be almost the same (within a factor of 1.5-2, because of oxygen that is consumed by the oxidation of carbon), because they are dependent only on the properties of thermally grown SiO 2 ; in contrast, the linear reactionrate constants (k l ) can be expected to vary, because the oxidation reactions at the oxide/matrix interface are not the same for SiC and silicon. Variability in the linear reaction rates can also be expected for different crystallographic orientations or structures of SiC.…”

Section: (7) Comparisons To Oxidation Rates Of Siliconmentioning

confidence: 94%

Variation of the Oxidation Rate of Silicon Carbide with Water‐Vapor Pressure

Opila¹

1999

Journal of the American Ceramic Society

335

243

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Chemically vapor deposited silicon carbide (CVD SiC) was oxidized at temperatures of 1000°-1400°C in H 2 O/O 2 gas mixtures with compositions of 10-90 vol% water vapor at a total pressure of 1 atm. Additional experiments were conducted in H 2 O/argon mixtures at a temperature of 1100°C. Experiments were designed to minimize impurity and volatility effects, so that only intrinsic water-vapor effects were observed. The oxidation kinetics increased as the watervapor content increased. The parabolic oxidation rates in the range of 10-90 vol% water vapor (the balance being oxygen) were approximately one order of magnitude higher than the rates that were observed in dry oxygen for temperatures of 1200°-1400°C. The power-law dependence of the parabolic oxidation rate on the partial pressure of water vapor at all temperatures of the study indicated that the molecular species was not the sole rate-limiting oxidant. The determination of an activation energy for diffusion was complicated by variations in the oxidation mechanism and oxide-scale morphology with the partial pressure of water vapor and the temperature.

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Section: (7) Comparisons To Oxidation Rates Of Siliconmentioning

confidence: 94%

Variation of the Oxidation Rate of Silicon Carbide with Water‐Vapor Pressure

Opila¹

1999

Journal of the American Ceramic Society

335

243

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“…Reactions [1]- [4] show large positive values for log Kp. Reaction [5] shows silicon carbide dissociates under vacuum conditions if silicon vapor is removed. Oxidation can also occur without the formation of an oxide film by reactions [2] and [4].…”

mentioning

confidence: 99%

The Oxidation of Silicon Carbide at 1150° to 1400°C and at 9 × 10[sup −3] to 5 × 10[sup −1] Torr Oxygen Pressure

Gulbransen

Andrew

Brassart

1966

J. Electrochem. Soc.

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A kinetic study was made of the oxidation of high-purity silicon carbide using a dynamic-type reaction system. Two types of oxidation behavior were found. Passive oxidation occurred for conditions where silica films were formed on the surface. Active oxidation occurred for conditions where volatile silicon monoxide was formed. The transition conditions between the two types of oxidation were studied as a function of oxygen pressure and temperature. The transition temperatures and pressures were related to thermochemical conditions for the reaction of silicon carbide with silica to form silicon monoxide and carbon monoxide.

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“…At temperatures of 1200°C and higher, the oxidation kinetics are generally considered purely parabolic (Costello and Tressler, 1986;Zheng et al, 1990a;Ogbuji and Opila, 1995). As first noted by Motzfeldt (1964), the parabolic rates of SiC should be 1.5 to 2 times slower than Si due to the additional oxygen consumed in the formation of gaseous products by the reactions:…”

Section: Oxidation Of Pure Sic In Dry Oxygenmentioning

confidence: 99%

“…This has beenshown to be true experimentally (Motzfeldt, 1964;Costello and Tressler, 1986;Ogbuji and Opila, 1995). Parabolic oxidation rates for pure materials, Si and SiC, as well as Si3N4 discussed below, are compared in Figure 6 on an Arrhenius plot.…”

Section: Oxidation Of Pure Sic In Dry Oxygenmentioning

confidence: 99%

Corrosion of Ceramic Materials

Opila

Jacobson

2013

Materials Science and Technology

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The sections in this article are Introduction Experimental Techniques Oxidation of Silica‐Formers Properties of Silica Basic Oxidation Mechanisms of Silica Formers Oxidation of Silicon Oxidation of Pure Si C in Dry Oxygen Oxidation of Pure Si 3 N 4 in Dry Oxygen Oxidation of Si C and Si 3 N 4 in the Presence of Low Level Impurities Oxidation of Si C and Si 3 N 4 Containing Sintering Aids Oxidation of Silica Formers in Other Oxidants Oxidation of Si , Si C , and Si 3 N 4 in Water Vapor Oxidation of Si C in CO 2 Cyclic Oxidation of Silica‐Formers Effect of Oxidation on Fracture Strength of Silica‐Formers Volatility Direct Vaporization Oxide–Substrate Reactions Active Oxidation Molten Salt Corrosion Refractory Oxide Coatings on Silica‐Forming Ceramics Oxidation of Alumina‐Forming Non‐oxides Oxidation of AlN Oxidation of Al 4 C 3 Boria‐Forming Ceramics Transition Metal Carbides and Nitrides Transition Metal Carbides Transition Metal Nitrides Oxidation of Ceramics Forming Multi‐Component Scales Mixed Oxide Scales Transition Metal Borides Oxidation of Complex Systems Resulting in Mixed Oxide Scales Composites which form Compound Oxides SiC‐Reinforced Al 2 O 3 Si 2 N 2 OZrO 2 Ti B 2  Al 2 O 3 Composites which form Single Phase Oxide Solid Solutions Ceramic Matrix Composites Summary

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On the Rates of Oxidation of Silicon and of Silicon Carbide in Oxygen, and Correlation with Permeability of Silica Glass.

Cited by 97 publications

References 0 publications

Variation of the Oxidation Rate of Silicon Carbide with Water‐Vapor Pressure

Variation of the Oxidation Rate of Silicon Carbide with Water‐Vapor Pressure

The Oxidation of Silicon Carbide at 1150° to 1400°C and at 9 × 10[sup −3] to 5 × 10[sup −1] Torr Oxygen Pressure

Corrosion of Ceramic Materials

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