On the role of laser irradiation in the processes of laser desorption/ionisation from silicon surfaces

New approaches to the laser mass spectrometry of organic samples

“…The last property is particularly important, because the laser absorption-ioniza-tion of molecules on the surface of single crystal silicon substrates is extremely inefficient [4], and hence, for the purpose of high-sensitivity analysis, an active surface is a prerequisite. As the method developed, a large number of SALDI-active layers of different morphologies and structures were proposed, including porous silicon [8], amorphous silicon [9], and silicon nanothreads [10].…”

“…From quantum mechanical calculations, the localization of a positive charge decreases the energy barrier for proton transfer from surface SiOH groups by about 4 eV, thus ensuring effective proton transfer to the molecules adsorbed on the groups; Ð ion desorption. According to the results in [10], desorption occurs by a thermal mechanism and is due to the surface being rapidly heated locally by laser radiation.…”

Nanoscale silicon surface-assisted laser desorption/ionization mass spectrometry: environment stability and activation by simple vacuum oven desiccation

“…5 Recently, it was proven that nanoscale silicon material mass spectrometry was driven by a thermal and proton transfer mechanism for MS desorption/ionization. [28][29][30][31][32] In particular, Alimpiev et al 32 reported extensive results exploring the silicon-based SALDI mechanism. The silicon substrate formed hole/free electron pairs through laser irradiation, and the holes became trapped at localized electronic states near the surface.…”