On the semiconductor laser logarithmic gain-current density relation

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers

“…Further verification of the analysis presented has been performed on optimized InGaAs QW ( 980-nm) lasers, with strong carrier confinement in the QW's, also demonstrating errors of less than 5%. Several computational [39], [40], analytical [33], [41], and experimental [42], [43] results have also demonstrated similar behavior of an increase in the value for longer cavity devices, in agreement with (11).…”

“…The term can also be expressed as , with . From the relationship of the threshold current density with temperature changes in (4) and (6), we can reexpress the inverse of the characteristic temperature coefficient as follows: (11) A similar expression relating the values to the internal parameters has also been proposed by DeTemple and Herzinger [33]. From (11), the cavity length-dependent ( ) terms in the formulation come in the modal threshold gain ( ) and the terms.…”

“…In our analysis, the gain expression for QW lasers is assumed to follow the semi-logarithmic gain expression which is a function of material gain parameters ( ), the fraction of injection current density in the QW ( ), and the transparency current density in the QW ( ) [33], [34]. This semi-logarithmic threshold-gain expression is (1) Using the threshold condition , the threshold current density for a single QW laser can then be expressed as follows: (2) where is the current injection efficiency (i.e., the fraction of current density entering the active region), which equals the internal quantum efficiency as measured above laser threshold.…”

Dispersive Optical Bistability in Quantum Wells With Logarithmic Gain

“…This approximation is more accurate than the linear approximation used elsewhere [30], both in bulk [31] and in small quantum well lasers where the carrier population of higher levels is negligible [32], and therefore will be used, instead of the linear relation in (1), in the rest of the paper.…”

Realization and modeling of a 27-GHz integrated passively mode-locked ring laser

“…The semiconductor optical amplifier (SOA) is described using the standard rate equations and the logarithmic gain-current density validated in [5] Here are the CW and CCW photon densities, is the active region carrier density, is the carrier density generated in the active layer by the injection current, is the carrier transparency density, is the group velocity, is the linear gain coefficient, is the carrier lifetime, is the bimolecular recombination coefficient, is the Auger recombination coefficient, is the confinement factor, is the sum of the different losses for one segment (the scattering loss, the free carrier loss in the cladding, and the free carrier absorption within the active layer which depends of the carrier density), is the time segment, and is the spontaneous emission coupling factor.…”