Realization and modeling of a 27-GHz integrated passively mode-locked ring laser

Abstract

. (2005). Realization and modeling of a 27 GHz integrated passively mode-locked ring laser. IEEE Photonics Technology Letters, 17(11), 2277-2279. DOI: 10.1109/LPT.2005 General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Abstract-We present a realization and the modeling of a 27-GHz integrated extended cavity ring laser that is passively mode-locked. The mode-locked ring laser is fabricated with active-passive integration. Experimental results show that internal reflections are the major factor affecting operation stability. Continuous-wave, self-pulsating, and in small windows of operation mode-locked regimes have been observed. Similar regimes have been observed in our bidirectional laser model. This model describes the semiconductor amplifier and the saturable absorber using rate equations. Our experimental and theoretical results are compared and discussed.

High-Performance InP-Based Photodetector in an Amplifier Layer Stack on Semi-Insulating Substrate

“…Previously, we reported on devices based on a combination of PWDs and SOAs, such as multiwavelength ring lasers [1] and mode-locked lasers [2]. This letter focuses on the performance of PDs fabricated in the SOA layer stack and operated by reversely biasing the pn-junction.…”

GENERIC INP-BASED INTEGRATION TECHNOLOGY: PRESENT AND PROSPECTS (Invited Review)

“…Figure 2 illustrates some functionalities that can be realized in a generic Indium Phosphide technology that supports integration of four basic building blocks: passive waveguide devices, phase modulators, semiconductor optical amplifiers and polarization converters. Most of the functionalities shown in Figure 2 have been reported by us: compact MMI couplers [30] and AWGs [31], optical switches [32] and modulators [33], multiwavelength and tunable lasers [34], flip-flops and ultrafast wavelength converters [35], picosecond pulse lasers [36] and polarization splitters and converters [37]. )).…”

Moore's law in photonics

“…Most of the functionalities shown in Fig. 2 have been reported by us: compact MMIcouplers [30] and AWGs [31], optical switches [32] and modulators [33], multiwavelength and tunable lasers [34], flip-flops and ultrafast wavelength converters [35], picosecond pulse lasers [36] and polarization splitters and converters [37]. Figure 3 shows an example of an integrated discretely tunable laser with nanosecond switching speed [34], useful for packet switching applications, which has been developed in our experimental generic integration technology.…”