On the synthesis and manipulation of InAs quantum dots

Green, Mark; Nørager, Sebastian; Moriarty, Philip; Motevalli, Majid; O’Brien, Paul

doi:10.1039/b001354o

Cited by 34 publications

(26 citation statements)

References 29 publications

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“…High quality crystalline III‐V materials are harder to prepare (particles or films) due to the increased covalent nature of these materials as compared to the analogous II‐VI materials. A mixture of the indium halide, indium(III)chloride, and As(NMe 2 ) 3 was thermolyzed at 167°C in 4‐ethylpyridine (solvent and capping agent) and produced high quality particles of InAs, showing distinct quantum size effects in its optical properties 27. However, preparing particles from halide‐containing precursors may result in some halide being retained within the desired material.…”

Section: Anaerobic Methodsmentioning

confidence: 99%

“…The size distribution, due to the lack of separation of nucleation from growth, is large, with the final product sometimes being contaminated by oxide. As mentioned, we used a similar approach to produce nanoparticles of InAs from the thermolysis of InCl 3 and As(NMe 2 ) 3 at 167°C in 4‐ethylpyridine 27. A single‐molecular precursor approach was also employed to produce III‐V nanoparticles of InP and GaP, using the indium/gallium diorganophosphide compounds, M(P t Bu 2 ) 3 (M = Ga, In), which were dissolved in 4‐ethylpyridine (solvent and capping agent) and refluxed for 7 days 41.…”

Section: Synthesis Of Nanoparticles From Single‐molecular Precursorsmentioning

confidence: 99%

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Syntheses of semiconductor nanoparticles using single‐molecular precursors

Pickett

O’Brien

2001

The Chemical Record

166

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Methods for the preparation of II-VI, III-V, and II-V as well as other compound semiconductor nanoparticles using main group single-molecular precursors have been developed. The work involves the design and synthesis of compounds containing all the elements required within the desired nanoparticulate material. Precursors are tailored to give reproducible, clean decomposition at moderate temperatures, leading to high quality, defect free, mono-dispersed nanoparticles. In this article we cover key aspects of precursor and nanoparticle synthesis. One of the more successful and reproducible series of single-source precursors used, and the one on which we have concentrated our research efforts, is the bis(dialkyldithio-/diseleno-carbamato)cadmium(II)/zinc(II) compounds, M(E(2)CNR(2))(2) (M = Zn or Cd, E = S or Se, and R = alkyl) for the preparation of chalcogenide nanoparticulate materials. Preliminary mechanistic studies suggest that the precursor to nanoparticle deposition route is strongly influenced by the alkyl substituent groups present, and may well determine the phase and quality of the final metal chalcogenide nanoparticles produced. Herein we discuss the synthesis of semiconductor nanoparticles using such single-molecular precursors.

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Section: Anaerobic Methodsmentioning

confidence: 99%

Section: Synthesis Of Nanoparticles From Single‐molecular Precursorsmentioning

confidence: 99%

Syntheses of semiconductor nanoparticles using single‐molecular precursors

Pickett

O’Brien

2001

The Chemical Record

166

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“…The TOPO cap can be replaced by other organic capping agents such as pyridines, 4-picolene, tris(2-ethylhexyl)phosphate and 4-trifluoromethyl(thiophenol) (Kuno et al 1997). In a similar method, by using n-tributylphosphine (TBP) instead of TOP, Bowen-Katari et al (1994) produced near-defect-free CdSe nanoparticles at 350 • C. Other nanoparticles synthesized by organometallic routes include ZnSe (Hines & Guyot-Sinnest 1998;Ludolf et al 1998), InP (Green 1999;Guzelian et al 1996;Micic et al 1994Micic et al , 1995Micic et al , 1996Micic et al , 1997Norager & O'Brien 2000;Olshavsky et al 1990), GaP (Green 1999), InAs (Banin et al 1997;Green 1999;Green et al 2000) and GaAs (Norager & O'Brien 2000;Olshavsky et al 1990), summarized in table 2. In a recent development Peng & Peng (2001) reported the use of CdO complexed to hexylphosphonic acid (HPA) or tetradecylphosphonic acid (TDPA), as an alternative to (CH 3 ) 2 Cd, in TOPO syntheses of CdE (E = S, Se, Te).…”

Section: Introductionmentioning

confidence: 94%

“…After isolation it provides electronic passivation, prevents agglomeration and governs the solubility of the nanoparticles. (Green 1999;Guzelian et al 1996;Micic et al 1994Micic et al , 1995Micic et al , 1996Micic et al , 1997Norager & O'Brien 2000;Olshavsky et al 1990), GaP (Green 1999), InAs (Banin et al 1997;Green 1999;Green et al 2000) and GaAs (Norager & O'Brien 2000;Olshavsky et al 1990), summarized in table 2.…”

Section: Introductionmentioning

confidence: 99%

New synthetic routes for quantum dots

Crouch

Nørager

O’Brien

et al. 2002

Philosophical Transactions of the Royal Society of London. Seri

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Various methods for the synthesis of quantum dots of compound semiconductors are discussed. Emphasis is placed on methods involving the decomposition of chalcogenide-containing precursors in tri-n-octylphosphine oxide. The use of simple coordination complexes can avoid the use of pyrophoric precursors. Approaches based on melts or the use of imino-bisdichalcogeno-diphosphinates are also discussed. These routes may be suitable for the production of large quantities of quantum dots.

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“…Single-source materials, 90 organoarsines, 91 and silylamides 92 have been used but pale in comparison to the quality of the trimethylsilyl-based syntheses. Initially, aminoarsines yielded poor results, 93 but have since been reexamined. Utilizing the understanding of the tris(dialyklamino)phosphine conversions, tris(dimethylamino)arsine was used to successfully produce a range of InAs nanomaterials with moderate (PLQY ∼30%, FWHM ∼100 nm) photoluminescent quality.…”

Section: Indium Arsenidementioning

confidence: 99%

Aminophosphine Reduction Mechanisms and the Synthesis of Indium Phosphide Nanomaterials

Laufersky¹

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<p>Indium phosphide (InP) nanomaterials are attractive for countless technological applications due to their well-placed band gap energies. The quantum confinement of these semiconductors can give rise to size-dependent absorption and emission features throughout the entire visible spectrum. Therefore, InP materials can be employed as low-toxicity fluorophores that can be implemented in high value avenues such as biological probes, lighting applications, and lasing technologies. However, large scale development of these quantum dots (QDs) has been stymied by the lack of affordable and safe phosphorus precursors. Syntheses have largely been restricted to the use of dangerous chemicals such as tris(trimethylsilyl)phosphine ((TMS)₃P), which is costly and highly sensitive to oxygen and water. Recently, less-hazardous tris(dialkylamino)phosphines have been introduced to produce InP QDs on par with those utilizing (TMS)₃P. However, a poor understanding of the reaction mechanics has resulted in difficulties tuning and optimizing this method. In this work, density functional theory (DFT) is used to identify the mechanism of this aminophosphine precursor conversion. This understanding is then implemented to design an improved InP QD synthesis, allowing for the production of high-quality materials outside of glovebox conditions. Time is spent understanding the impact of different precursor salts on the reaction mechanisms and discerning their subsequent effects on nanoparticle size and quality. The motivation of this work is to formulate safer and less technical indium phosphide quantum dot syntheses to foster non-specialist and industrial implementation of these materials.</p>

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On the synthesis and manipulation of InAs quantum dots

Cited by 34 publications

References 29 publications

Syntheses of semiconductor nanoparticles using single‐molecular precursors

Syntheses of semiconductor nanoparticles using single‐molecular precursors

New synthetic routes for quantum dots

Aminophosphine Reduction Mechanisms and the Synthesis of Indium Phosphide Nanomaterials

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