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Various methods for the synthesis of quantum dots of compound semiconductors are discussed. Emphasis is placed on methods involving the decomposition of chalcogenide-containing precursors in tri-n-octylphosphine oxide. The use of simple coordination complexes can avoid the use of pyrophoric precursors. Approaches based on melts or the use of imino-bisdichalcogeno-diphosphinates are also discussed. These routes may be suitable for the production of large quantities of quantum dots.

The rate of grating formation in a photorefractive polymer composite sensitized by CdSe quantum dots is found to be independent of applied field, in contrast to similar composites sensitized by other types of nanoparticles. The photorefractive polymer composite under study consists of poly(N-vinylcarbazole) as the nominal charge transporting matrix, an electro-optic dye, and CdSe quantum dots passivated by tri-n-octylphosphine oxide. Both the field-independent grating formation rate and the lower diffraction efficiency compared to other nanoparticle-sensitized composites are attributed to low initial trap density, i.e., a reduced stability of ionized quantum dots within the composite in the dark.