On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices

Westlinder, Jörgen; Schram, T.; Pantisano, L.; Cartier, E.; Kerber, A.; Lujan, G.; Olsson, Jörgen; Groeseneken, G.

doi:10.1109/led.2003.816579

Cited by 112 publications

(65 citation statements)

References 10 publications

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“…Fabrication of the MWCNT electrode involved the preparation of a CoSi 2 surface to act as a base layer, and as part of that process a 20 nm thick TiN fi lm was used as a capping layer to prevent oxidation of Co during silicidation. [ 34 ] Both of these materials can act as electrodes, [ 35 ] and have work functions in the same region as MWCNTs ( − 4.62 eV for CoSi 2 [ 36 , 37 ] and − 4.8 eV for TiN [ 38 ] compared to − 4.95 eV for MWCNTs [ 39 ] (Figure 1 b)). However both CoSi 2 and TiN are markedly more hydrophilic than MWCNTs, yielding contact angles with a droplet of water of 53.2 ° and 64.3 ° , respectively ( Figure S2; Supporting Information), intermediate between previously measured values for a Pt electrode (93.8 ° ) [ 26 ] and for the highly hydrophilic FTO-glass front electrode (18.7 ° ).…”

Section: Resultsmentioning

confidence: 99%

Superhydrophobic Carbon Nanotube Electrode Produces a Near‐Symmetrical Alternating Current from Photosynthetic Protein‐Based Photoelectrochemical Cells

Tan

Yan

Crouch

et al. 2013

Adv Funct Materials

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The construction of protein‐based photoelectrochemical cells that produce a variety of alternating currents in response to discontinuous illumination is reported. The photovoltaic component is a protein complex from the purple photosynthetic bacterium Rhodobacter sphaeroides which catalyses photochemical charge separation with a high quantum yield. Photoelectrochemical cells formed from this protein, a mobile redox mediator and a counter electrode formed from cobalt disilicide, titanium nitride, platinum, or multi‐walled carbon nanotubes (MWCNT) generate a direct current during continuous illumination and an alternating current with different characteristics during discontinuous illumination. In particular, the use of superhydrophobic MWCNT as the back electrode results in a near symmetrical forward and reverse current upon light on and light off, respectively. The symmetry of the AC output of these cells is correlated with the wettability of the counter electrode. Potential applications of a hybrid biological/synthetic solar cell capable of generating an approximately symmetrical alternating current are discussed.

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Section: Resultsmentioning

confidence: 99%

Superhydrophobic Carbon Nanotube Electrode Produces a Near‐Symmetrical Alternating Current from Photosynthetic Protein‐Based Photoelectrochemical Cells

Tan

Yan

Crouch

et al. 2013

Adv Funct Materials

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“…Conductive metal nitrides such as titanium nitride and tantalum nitride have been investigated as metal gate electrodes to solve challenging issues such as boron penetration and gate depletion, associated with polysilicon gate electrodes. However, most of them suffer from thermal instability of effective work function after high temperature annealing [1][2][3][4]. The use of amorphous ternary M-Si-N (M =Ta, Mo, W) as a diffusion barrier for Al or Cu metallization has been previously studied [5][6], and the use of TaSi X N Y as a metal gate electrode candidate has been recently reported [7].…”

Section: Introductionmentioning

confidence: 99%

Thermally Stable MoXSiYNZ as a Metal Gate Electrode for Advanced CMOS Devices

Zhao¹,

Kim²,

Kim³

et al. 2005

AIP Conference Proceedings

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“…In addition, the heavily doped polycrystalline silicon gate electrode may have to be replaced with metal electrodes. Midgap gate electrode metals, such as TiN, are being extensively investigated [1][2][3][4]. The metal/dielectric and the dielectric/Si interface determine the CMOS device performance, including channel mobility and threshold voltage.…”

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confidence: 99%

Scanning transmission electron microscopy of gate stacks with HfO2 dielectrics and TiN electrodes

Agustin

Fonseca²,

Hooker

et al. 2005

Applied Physics Letters

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High-angle annular dark-field (HAADF) imaging and electron energy-loss spectroscopy (EELS) in scanning transmission electron microscopy were used to investigate HfO2 gate dielectrics grown by atomic layer deposition on Si substrates, and their interfaces with TiN electrodes and silicon, as a function of annealing temperature. Annealing at high temperatures (900°C) caused significant roughening of both bottom (substrate) and top (electrode) interface. At the bottom interface, HAADF images showed clusters of Hf atoms that protruded into the interfacial SiO2 layer. Low-loss EELS established that even crystalline HfO2 films exposed to relative high temperatures (700°C) exhibited significant differences in their electronic structure relative to bulk HfO2. Further annealing caused the electronic structure to more closely resemble that of bulk HfO2, with the most significant change due to annealing with the TiN electrode.

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On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices

Cited by 112 publications

References 10 publications

Superhydrophobic Carbon Nanotube Electrode Produces a Near‐Symmetrical Alternating Current from Photosynthetic Protein‐Based Photoelectrochemical Cells

Superhydrophobic Carbon Nanotube Electrode Produces a Near‐Symmetrical Alternating Current from Photosynthetic Protein‐Based Photoelectrochemical Cells

Thermally Stable MoXSiYNZ as a Metal Gate Electrode for Advanced CMOS Devices

Scanning transmission electron microscopy of gate stacks with HfO2 dielectrics and TiN electrodes

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