On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

Realization of volatile and non-volatile resistive switching with N-TiO2 nanorod arrays based memristive devices through compositional control

“…The forgetting process can be spontaneous, enhance the plasticity of the memory system, erase historical incidents, and ensure energy efficient brain operation. Sarkar et al utilized the volatile effect in dielectric TiO2 to mimic the biological forgetting process of the human brain [21]. Zhao et al fabricated TiO2 nanowire based memristors, which demonstrated potentiation and depression features by applying consecutive voltage sweeps [22].…”