One-step fabrication of porous GaN crystal membrane and its application in energy storage

Abstract

Single-crystal gallium nitride (GaN) membranes have great potential for a variety of applications. However, fabrication of single-crystalline GaN membranes remains a challenge owing to its chemical inertness and mechanical hardness. This study prepares large-area, free-standing, and single-crystalline porous GaN membranes using a one-step high-temperature annealing technique for the first time. A promising separation model is proposed through a comprehensive study that combines thermodynamic theories analysis and experiments. Porous GaN crystal membrane is processed into supercapacitors, which exhibit stable cycling life, high-rate capability, and ultrahigh power density, to complete proof-of-concept demonstration of new energy storage application. Our results contribute to the study of GaN crystal membranes into a new stage related to the elelctrochemical energy storage application.

The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands

“…Each N 1s spectrum can be fitted with two peaks. The peaks centered at ≈396 eV refer to metal nitride (N—M), whereas the peaks at ≈398 eV are related to N—O bond . The peak ratios between N—M and N—O for all IGZO films are shown in Table .…”

Anisotropic properties of pipe-GaN distributed Bragg reflectors

“…Embedded dielectric distributed Bragg reectors, 21,22 Ti 3 O 5 /Al 2 O 3 DBRs, 23 and ITO/dielectric DBRs 24 had been reported to enhance the light extraction process in LED structures. Porous GaN [25][26][27] and AlGaN 28 materials with a low effective refractive index had been reported for DBR structures. [29][30][31][32][33][34] Surface grating structures, 35 m-plane air-gap DBR MC structures, 36 and nonpolar GaN on an m-plane GaN substrate 37 had been reported for VCSELs with single-polarization emission properties that can be used for atomic clock applications.…”

Enhanced excitonic emission efficiency in porous GaN

“…Regarding wide band gap semiconductors, very impressive results were recently published concerning white light emission using porous silicon carbide, a chemically inert semiconductor 7 . Applications of porous gallium nitride and related heterostructures already appear in various areas, among which are the high sensitivity hydrogen gas sensors 8 , water splitting 9 , energy storage 10 , 11 , development of a new substrate transfer technology 12 , fabrication of light-emitting devices 13 , 14 and microcavities 15 .…”