One-step phase transition and thermal stability improvement of Ge 2 Sb 2 Te 5 films by erbium-doping

Threshold switching dynamics of pseudo-binary GeTe–Sb2Te3 phase change memory devices

“…In addition to this, excellent scaling and multi-bit applications [2,3]. Also, they have been doped with other elements such as N, Er, Sc, Si etc in order to improve their structural stability and endurance [16][17][18][19][20]. Various compositions of Ge-Sb-Te system in the vicinity of the pseudo-binary line have been investigated for understanding their crystal structures [21,22].…”