OPC verification on cell level using fully rigorous mask topography simulation

Domnenko, Vitaliy; Klimpel, Thomas; Viehoever, Georg; Koop, Hans‐Ulrich; Melvin, Lawrence S.; Schmoeller, Thomas

doi:10.1117/12.746625

Cited by 5 publications

(3 citation statements)

References 1 publication

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“…Using Eq. (13) and assuming the FWHM of EUV light source about 0.8 nm, the light intensity versus wavelength for the incident EUV light is plotted as the red line in Fig. 8.…”

Section: Full 3-d Simulation Of Patterned Euv Maskmentioning

confidence: 99%

“…The FDTD and FEM can be used to simulate the complex 3-D structures, and these two methods have recently been used in EUV mask simulation. [13][14][15] The memory requirement and computation time consumption of the FDTD simulation mostly depend on the mesh numbers used in computation domain, which vary with mesh size, wavelength, and the simulated structure complexity. More accurate results can be obtained by using finer meshes in FDTD computation, but a long computation time and a huge amount of memory result.…”

Section: Introductionmentioning

confidence: 99%

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Efficient scattering simulations for equivalent extreme ultraviolet mask multilayer structures by modified transmission line theory and finite-difference time-domain method

Lee

2010

J. Micro/Nanolith. MEMS MOEMS

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The modified transmission line theory is used to calculate equivalent refractive indices of the extreme ultraviolet (EUV) mask multilayer (ML) over wavelengths from 13.35 to 13.65 nm for finite-difference time-domain (FDTD) simulation. Generally speaking, a fine mesh requiring huge memory and computation time are necessary to get accurate results in an FDTD simulation. However, it is hard to get accurate results for ML simulation due to the thin thickness of each layer. By means of an equivalent refractive index, the ML can be treated as one layer with the bulk effective material. Using FDTD simulations, we study the reflectivities of 40 Mo/Si ML and bulk material cases. The ML structure and bulk material with periodic excessive surface roughness as well as patterned with periodic contact holes are also studied by using two-and three-dimensional FDTD simulations. The simulation cases for a single wavelength and for a full-bandwidth EUV light source with a 6 ML system are studied. The results from each simulation show that the root mean square error between ML simulations and the bulk material simulations are confined within 3.3%, and all cases indicate that the FDTD computation time of bulk material is about half as compared with a 40-ML simulation. C 2010 Society of Photo-Optical Instrumentation Engineers.

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“…Using Eq. (13) and assuming the FWHM of EUV light source about 0.8 nm, the light intensity versus wavelength for the incident EUV light is plotted as the red line in Fig. 8.…”

Section: Full 3-d Simulation Of Patterned Euv Maskmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Efficient scattering simulations for equivalent extreme ultraviolet mask multilayer structures by modified transmission line theory and finite-difference time-domain method

Lee

2010

J. Micro/Nanolith. MEMS MOEMS

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“…To perform the simulations, we used two lithography simulation software packages, namely, Sentaurus Lithography (S-Litho) from Synopsys and EM-SUITE from Panoramic Technology Inc. EM-Suite was used to perform simulations implementing the FDTD algorithm 19,20 while S-Litho was used to perform simulations implementing the FDTD as well as the waveguide algorithms 21 for the rigorous modeling of EUV masks. The optical and imaging parameters used for the simulations were chosen to match the parameters used for the AIT imaging, which were 13.5 nm wavelength radiation incident on the mask at an angle of 6 degrees, disk-fill illumination with a r value of 0.2, and a mask-side numerical aperture of 0.0875 (0.35, 4Â wafer-side).…”

Section: B Comparing the Simulation And Ait Through-focus Aerial Imagesmentioning

confidence: 99%

Level-set multilayer growth model for predicting printability of buried native extreme ultraviolet mask defects

Upadhyaya

Basavalingappa

Herbol

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of EUV mask defects. In this work, two native mask blank defects were characterized using atomic force microscopy (AFM) and cross-section transmission electron microscopy (TEM), and the defect printability of the characterized native mask defects was evaluated using simulations implementing the finitedifference time-domain and the waveguide algorithms. The simulation results were compared with through-focus aerial images obtained at the SEMATECH Berkeley Actinic Inspection Tool (AIT), an EUV mask-imaging microscope at Lawrence Berkeley National Laboratory. The authors found agreement between the through-focus simulation results and the AIT results. To model the Mo/Si multilayer growth over the native defects, which served as the input for the defect printability simulations, a level-set technique was used to predict the evolution of the multilayer disruption over the defect. Unlike other models that assume a constant flux of atoms (of materials to be deposited) coming from a single direction, this model took into account the direction and incident fluxes of the materials to be deposited, as well as the rotation of the mask substrate, to accurately simulate the actual deposition conditions existing inside the ion beam deposition tool. The modeled multilayer growth was compared to the cross-section TEM images through the defects, as well as to the AFM scans for the given defects, and a good agreement was observed between them.

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Non-delta-chrome optical proximity correction methodology for process models with three-dimensional mask effects

Tsai

Melvin

2011

J. Micro/Nanolith. MEMS MOEMS

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OPC verification on cell level using fully rigorous mask topography simulation

Cited by 5 publications

References 1 publication

Efficient scattering simulations for equivalent extreme ultraviolet mask multilayer structures by modified transmission line theory and finite-difference time-domain method

Efficient scattering simulations for equivalent extreme ultraviolet mask multilayer structures by modified transmission line theory and finite-difference time-domain method

Level-set multilayer growth model for predicting printability of buried native extreme ultraviolet mask defects

Non-delta-chrome optical proximity correction methodology for process models with three-dimensional mask effects

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