Operating limits of Al-alloyed high-low junctions for BSF solar cells

Alamo, J.A. del; Eguren, J.; Ĺuque, A.

doi:10.1016/0038-1101(81)90038-1

Cited by 87 publications

(22 citation statements)

References 14 publications

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“…Typically, in order to form the p þ BSF via Al-Si alloying, temperatures of around 800°C (for a few seconds) are used [53]. This can bring two major disadvantages.…”

Section: Comparison With Standard Perc Technology and Industrial Applmentioning

confidence: 99%

Large area p-type PERL cells featuring local p+ BSF formed by laser processing of ALD Al2O3 layers

Cornagliotti

Urueña

Hallam

et al. 2015

Solar Energy Materials and Solar Cells

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“…Typically, in order to form the p þ BSF via Al-Si alloying, temperatures of around 800°C (for a few seconds) are used [53]. This can bring two major disadvantages.…”

Section: Comparison With Standard Perc Technology and Industrial Applmentioning

confidence: 99%

Large area p-type PERL cells featuring local p+ BSF formed by laser processing of ALD Al2O3 layers

Cornagliotti

Urueña

Hallam

et al. 2015

Solar Energy Materials and Solar Cells

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“…In these calculations, the BSF profiles, junction depths, and peak concentrations were determined in accordance with the aluminum-silicon equilibrium phase diagram [7]. The methodology for determining these profiles can be found in [8]. The resulting s b value for each profile was determined at the p+-p BSF interface using a computer modeling approach described in [9].…”

Section: Resultsmentioning

confidence: 99%

Record high 18.6% efficient solar cell on HEM multicrystalline material

Rohatgi

Narasimha²,

Kamra³

et al. 1996

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996

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Solar cells with efficiencies as high as 18.6% (1 cm2 area) have been achieved by a process which involves impurity gettering and effective back surface passivation on 0.65 Q-cm multicrystalline silicon (mc-Si) grown by the heat exchanger method (HEM). This represents the highest reported solar cell efficiency on mc-Si to date. PCD analysis revealed that the bulk lifetime (q,) in HEM samples after phosphorus gettering can be as high as 135 ps. This increases the impact of the back surface recombination velocity (sb) on the solar cell performance. By incorporating a deeper aluminum BSF, the s b for solar cells in this study was lowered from 10,000 cm/s to 2,000 cm/s on HEM mc-Si. This combination of high zb and moderately low Sb resulted in the record high efficiency mc-Si solar cell. Model calculations i cate that lowering s b further can raise the efficiency of untextured HEM mcSi solar cells above 19.0%, thus closing the efficiency gap between good quality, untextured single crystal and mc-Si solar cells.

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“…A bifacial silicon solar cell with N + -P-P + structure has an N + -P front side (surface) and P + -P back side (surface). This back surface (P + -P) is an important seat of a Back Surface Field (J. D. Alamo et al 1981). In some solar cells, the front surface doping density ranges from 10 17 to 10 19 cm -3 .…”

Section: Bifacial Silicon Solar Cellmentioning

confidence: 99%