Optical and electrical characteristics of GaAs/InGaAs quantum-well device

Enhanced photoluminescence of InGaAs/AlGaAs quantum well with tungsten disulfide quantum dots

“…The PL spectra of the InGaAs/AlGaAs QW with varying concentrations of WS 2 QDs is displayed in figure 4(a). Two pronounced PL peaks at ∼978 nm (∼1.26 eV) and ∼920 nm (∼1.35 eV) were observed under the excitation with a photon energy of 3.06 eV, assigned to the transitions from the first and second electron subbands to the first subband of heavy holes, respectively [29,30]. With increasing the concentration of pristine WS 2 QDs, the PL intensity of the InGaAs/AlGaAs QW is increased.…”

Research on the high indium content InGaAs multiple quantum wells wafers for λ>1.55μm laser diodes

“…The reasons behind this peak shift are unclear, and it maybe associates with the software model that loses effectiveness in the large compression strain and very high carrier concentrations. The spontaneous emission rate curve had a slow increasing platform from 1.71 lm to 1.89 lm, at first we interpreted this platform from 21H and 12H transitions that was not negligible in the thick layer with quantum confinement effect, where mnH represented a transition from the mth conduction to the nth valence sub-band heavy (H)-hole character [16]. However, considering the quantum-mechanical calculation of selection rules, only transitions between sub-bands with the same quantum number m are allowed and transitions between sub-bands with dissimilar quantum numbers are forbidden transitions.…”

Surface‐interface analysis of InxGa1‐xAs/InP heterostructure in positive and negative mismatch system

“…As ternary III‐V compounds, In x Ga 1 − x As (0 < x < 1) films with relatively high carrier density, wide direct band gap from 0.35 to 1.42 eV, high reliability and radiation resistance have been widely applied into optical and electronic devices, such as short‐wave infrared photodetectors, light‐emitting diodes, lasers, solar cells, and high‐mobility transistors . With the recent technical development, various epitaxial growth technologies such as physical vapor deposition (PVD), liquid phase epitaxy (LPE), molecular beam epitaxy (MBE), and metal‐organic chemical vapor deposition (MOCVD) have been explored to prepare high‐performance thin‐film semiconductors .…”