Optical and Electrical Properties of Si:Er Light-Emitting Structures

Avalanche breakdown-related electroluminescence in single crystal Si:Er:O

“…EL was found to occur under both forward 6-10 and reverse bias. [8][9][10] Various experiments [11][12][13][14][15] have unambiguously established that the excitation of an Er core during PL or injection EL is associated with the Auger recombination of an exciton bound to an Er-related defect. An appreciable decrease in the PL and injection EL intensities by two or three orders of magnitude was observed with temperature increasing from 77 to 300 K. 3,4 At the same time, the temperaturerelated quenching of the EL in reverse biased diodes was strongly reduced.…”

“…To increase the Er-related luminescence intensity, we used a conventional procedure of erbium and oxygen ion co-implantation. 3,11,14 Erbium ions were implanted at energies of 2.0 and 1.6 MeV and doses of 1ϫ10 14 cm Ϫ2 . Oxygen co-implantation with energies 0.28 and 0.22 MeV and doses of 1ϫ10 15 cm Ϫ2 was designed to specially overlap the erbium implant.…”

“…Heat treatment of 620°C /1 hϩ900°C/0.5 h in a chlorine-containing atmosphere was carried out to remove the implantation damage and to activate the electrically and optically active erbium-related centers. 8,9,11,14 The chlorine-containing atmosphere was an oxygen flow with the addition of thrichloroethylene with a concentration of 0.5 mole %. 14 The implantation and subsequent annealing led to the formation of n ϩ type erbiumrelated near-surface regions with a donor concentration of 10 17 cm Ϫ3 .…”

“…8,9,11,14 The chlorine-containing atmosphere was an oxygen flow with the addition of thrichloroethylene with a concentration of 0.5 mole %. 14 The implantation and subsequent annealing led to the formation of n ϩ type erbiumrelated near-surface regions with a donor concentration of 10 17 cm Ϫ3 . The p ϩ -n ϩ junctions were produced by 40 keV boron implantation at a dose of 5ϫ10 15 cm Ϫ2 into the front side of the wafer.…”