No abstract

No abstract

No abstract

Recent results contributing to our understanding of mechanisms of defect formation and excitation of Er luminescence in Si:Er system are presented. An essential role of non-equilibrium intrinsic point defects in Er-related defects formation for both implanted and in-diffused Si:Er structures is demonstrated.The data of electroluminescence (EL) measurements evidence that the Er 3 + excitation occurs via capture of free excitons on neutral Er-related donor centers with subsequent Augerrecombination of bound excitons.

We have studied the effect of the annealing atmosphere on the behaviour of Er impurity atoms introduced in Czochralski-grown Si by means of diffusion from a surface source. Silicon nitride films partially covering the sulface of test structures were used to prevent any effect of the annealing atmosphere on Er diffusion. After annealing in an inert atmosphere, the penetration depth and the concentration of electrically active Er impurity atoms were found to be larger under the uncovered silicon surface than the values under the surface covered with a nitride layer. By contrast, after annealing in an oxidizing atmosphere, the depth and the concentration were lower under the uncovered surface. The results have been accounted for by excess intrinsic point defects being generated during annealing and interacting with electrically active and inactive Er impurity atoms.