Optical and electrical properties of Ta-doped ZnSnO3 transparent conducting films by sol–gel

Cai, Siqi; Li, Yiming; Chen, Xiao; Ma, Yuanyuan; Liu, Xiaojun; He, Yunqiu

doi:10.1007/s10854-016-4544-z

Cited by 38 publications

(10 citation statements)

References 40 publications

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“…Here, similar to the study on ZnSnO 3 thin films, 36 the Sn 3d peaks for Sb-doped BSO thin films are decomposed into three components, which appear at 485.6 ± 0.3 eV for the Sn with low valence (Sn 2+ ), 486.3 ± 0.3 eV for the Sn 4+ in BSO crystal lattice, and 487.2 ± 0.3 eV for the Sn 4+ adjacent to oxygen vacancy. The evolution of the relative concentrations for the above three components with Sb doping content is presented in Figure 7d−f.…”

Section: Resultssupporting

confidence: 72%

“…The peak at 540.1 eV binding energy is ascribed to the Sb 3d 3/2 level, 31 while the Sb 3d 5/2 and O 1s levels are overlapped at lower binding energies. It is also found that there is no obvious chemical shift with different Sb doping 36,37 and at 532.2 ± 0.3 eV for the oxygen in hydroxyl group (OH − ). 36,37 On the basis of the fitting results, the Sb doping content dependence of the relative concentrations for the oxygen adjacent to Sn 2+ (O−Sn) and oxygen vacancy (V O ) is given in Figure 7g,h, respectively.…”

Section: Resultsmentioning

confidence: 98%

“…It is also found that there is no obvious chemical shift with different Sb doping 36,37 and at 532.2 ± 0.3 eV for the oxygen in hydroxyl group (OH − ). 36,37 On the basis of the fitting results, the Sb doping content dependence of the relative concentrations for the oxygen adjacent to Sn 2+ (O−Sn) and oxygen vacancy (V O ) is given in Figure 7g,h, respectively. It is shown that the concentration of the oxygen adjacent to Sn 2+ increases with increasing Sb doping content, consistent with the changes in decomposed Sn 2+ concentration (Figure 7d).…”

Section: Resultsmentioning

confidence: 98%

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Growth, Microstructures, and Optoelectronic Properties of Epitaxial BaSn_1–xSb_xO_3−δ Thin Films by Chemical Solution Deposition

Wei

Tang

et al. 2018

ACS Appl. Energy Mater.

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Epitaxial thin films of perovskite BaSn 1−x Sb x O 3−δ are fabricated by a simple chemical solution deposition method, and the relationship among the processing, the microstructure, and the optoelectronic property is systematically investigated. The process of multiple annealing combined with the postannealing under nitrogen ambient is the optimal procedure to fabricate high quality BaSnO 3−δ thin films. Sb doping in Sn sites facilitates the epitaxial growth of the BaSnO 3−δ grains. The Hall results show that with increasing Sb doping content the carrier density and the carrier mobility are enhanced and decreased, respectively, resulting in the highest room-temperature electrical conductivity of 260 S/cm in the BaSn 0.91 Sb 0.09 O 3−δ thin film. It is confirmed that the ionized Sb 5+ and oxygen vacancies are the main scattering sources for carrier transport in BaSn 1−x Sb x O 3−δ thin films. The results will provide guidance for synthesis of BaSnO 3−δ -based and other donor-doped perovskite transparent conducting large-area thin films with low cost.

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Section: Resultssupporting

confidence: 72%

Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 98%

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Growth, Microstructures, and Optoelectronic Properties of Epitaxial BaSn_1–xSb_xO_3−δ Thin Films by Chemical Solution Deposition

Wei

Tang

et al. 2018

ACS Appl. Energy Mater.

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“…The resistivity of Zn2SnO4 is usually higher than that of ZnSnO3 [19]. This is reflected well in literature data of conductivity for ITO (σ = 104 Ω -1 cm -1 [20]), for HRT layers as Zn2SnO4 (σ = 50-100 Ω -1 cm -1 [21,22]) and for ZnSnO3 (σ = 250 Ω -1 cm -1 [17,23]). It should be mentioned that the ZTO film's properties are critically dependent on the growth conditions.…”

Section: Introductionsupporting

confidence: 78%

Tailoring of the Structural and Optoelectronic Properties of Zinc-Tin-Oxide Thin Films via Oxygenation Process for Solar Cell Application

et al. 2020

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In this study, the impact of compositional variation of highly resistivity transparent (HRT) metal oxide ZTO deposited by co-sputtered technique has been studied. The atomic composition has been tailored by the change of RF power and subsequent thermal oxygenation in mixed nitrogen and oxygen atmosphere. A phase transition from ZnSnO3 to ZnSnO4 was observed in the X-ray diffraction spectra, indicating the possible oxygen incorporation into the films during the thermal annealing process. Uniform microstructures with compact interconnected grains of around 6-7 nm were found in SEM images while no significant changes been observed upon oxygenation. Besides, the significant alteration of electronic properties was noticed as an effect of compositional variation via oxygenation. All the films showed above 85% of optical transmittance in the visible light spectrum. The optimum optoelectronic properties for RF power has been determined as of 50W (ZnO) and 10W (SnO2) via thermal oxygenation at 400 o C where the ratio O/(Zn+Sn) become around 1.6. The significant effect of oxygenation has been realized via primarily fabricated solar cells where the cell with ZnSnO4 HRT shows higher efficiency than the ZnSnO3.

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“…f) The energy levels to the vacuum level of plausible alternative materials for CdS and i‐ZnO/Al:ZnO. [ 101–106,143–145 ]…”

Section: Cgse Solar Cell's Architecture and Performance‐limiting Factorsmentioning

confidence: 99%

A Comprehensive Perspective on the Fabrication of CuGaSe₂/Si Tandem Solar Cells

Prathapani

Zhan

2021

Energy Tech

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This review points out the current need for further research on tandem solar cells as the commercial single‐junction solar cell technologies report close to their maximum performance limit. First, the conceptual insight and the desired interconnection schemes for tandem solar cells are briefly presented. Then, a comprehensive discussion on the structural, optical, and electronic properties of CuGaSe2, evaluating its use as a top cell absorber material, is presented. Furthermore, the current status and the critical analysis of CuGaSe2 solar cells, which finds that the adapted conventional device architecture possesses severe limitations, are presented. Based on the drawbacks of the existing materials in use, new materials to fabricate CuGaSe2 solar cells are proposed. Also, tandem configurations with newly proposed CuGaSe2 solar cell architecture by choosing Si photovoltaics as bottom cells are devised. In the end, further challenges in the devised tandem configurations with a focus on their band alignments are elucidated.

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Optical and electrical properties of Ta-doped ZnSnO3 transparent conducting films by sol–gel

Cited by 38 publications

References 40 publications

Growth, Microstructures, and Optoelectronic Properties of Epitaxial BaSn_1–xSb_xO_3−δ Thin Films by Chemical Solution Deposition

Growth, Microstructures, and Optoelectronic Properties of Epitaxial BaSn_1–xSb_xO_3−δ Thin Films by Chemical Solution Deposition

Tailoring of the Structural and Optoelectronic Properties of Zinc-Tin-Oxide Thin Films via Oxygenation Process for Solar Cell Application

A Comprehensive Perspective on the Fabrication of CuGaSe₂/Si Tandem Solar Cells

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Optical and electrical properties of Ta-doped ZnSnO3 transparent conducting films by sol–gel

Cited by 38 publications

References 40 publications

Growth, Microstructures, and Optoelectronic Properties of Epitaxial BaSn1–xSbxO3−δ Thin Films by Chemical Solution Deposition

Growth, Microstructures, and Optoelectronic Properties of Epitaxial BaSn1–xSbxO3−δ Thin Films by Chemical Solution Deposition

Tailoring of the Structural and Optoelectronic Properties of Zinc-Tin-Oxide Thin Films via Oxygenation Process for Solar Cell Application

A Comprehensive Perspective on the Fabrication of CuGaSe2/Si Tandem Solar Cells

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Growth, Microstructures, and Optoelectronic Properties of Epitaxial BaSn_1–xSb_xO_3−δ Thin Films by Chemical Solution Deposition

Growth, Microstructures, and Optoelectronic Properties of Epitaxial BaSn_1–xSb_xO_3−δ Thin Films by Chemical Solution Deposition

A Comprehensive Perspective on the Fabrication of CuGaSe₂/Si Tandem Solar Cells