Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μM High-Voltage CMOS Technology

Abstract

Many imaging applications, like medical or space applications, require radiation-hard sensors. Generally, during radiation, many different defects are created, depending on the type of the radiation. With TCAD software, cross-section of a radiation-hard photodiode was simulated, and afterwards the impact of different physical parameters was simulated. Physical parameters like epitaxial layer thickness or the trap density in the bulk, play a huge role towards the responsivity of the photodiode. This paper presents a variation experiment, where relevant physical parameters are varied and analysis of the spectral responsivity and dark current of the photodiode is discussed.