Optical and field effect studies of the Hg_0.7Cd_0.3 Te–anodic oxide interface

The impact of laser shock waves on anodic oxide - compound semiconductor interface

“…From the analysis of R H (B) one can determine the carrier parameters in n-type layer induced near the interface. The typical values of areal electron density are 5.0⋅10 11 ÷1.1⋅10 12 cm 2 and their mobility is within 18 00022 000 cm 2 /(V⋅s) that is in a good agreement with data obtained before [1,2,10,11]. It was also determined that anodization of p-type samples followed by removing AO does not affect the Hall coefficient field dependence.…”

“…Thus, within the AO-MCT interface model developed in [3,11] the following factors are supposed to be responsible for overall changes in samples caused by LSW: an increased potential barrier that prevents the elemental mercury from interface-to-semiconductor moving; the elemental mercury removed from an interface into an oxide volume and replaced with HgTe-based complexes; the AO-MCT interface rebuilding, which decreases the free mercury concentration. Additionally, elemental mercury and tellurium may probably form HgTe complexes at the interface.…”

In-situ evaluation of the anodic oxide growth on Hg1−xCdxTe (MCT) using ellipsometry and second harmonic generation

“…[6][7][8] These native films can provide an effective solution to the problem of passivation of ntype material since the anodic process consumes the MCT substrate in a controlled manner thus removing any surface damage leading to a sharp MCT/dielectric interface. 19,20 The electronic and optical properties [21][22][23][24] as well as the photoelectrochemical 25 response of the anodic oxide have also been examined. 9,10 The formation of the anodic oxide is by far the most extensively studied system with thorough investigations of the composition, 11 growth mechanisms [12][13][14][15][16][17][18] and thermal properties.…”

2 MeV Electron Irradiation Effects in (HG,CD) TE CCDS

“…The integrated dark current and effective well capacity as functions of total dose are shown in Figures 8 and 9 Several other studies have shown there to be a high density of traps at this interface also [17]. The linear dose dependence of the flatband shift indicates that saturation of the empty traps has not occurred at the maximum dose of 3x104 rad(ZnS).…”