Optical and magnetic properties of cobalt doped TiN thin films grown by RF/DC magnetron sputtering

Effect of Cr Concentration on the Optical and Magnetic Properties of Cr‐TiN Thin Films Grown by Reactive Magnetron Sputtering

“…This phenomenon of the decrease in the bandgap was also observed in iron‐doped TiN [ 16 ] and cobalt‐doped TiN. [ 17 ]…”

“…This phenomenon of the decrease in the bandgap was also observed in iron-doped TiN [16] and cobalt-doped TiN. [17] XPS analysis of Cr-TiN films was performed to study the existence of various elements in the films, their relative concentration, and oxidation states. The surface of the films was etched by low-energy Ar ions for 30 s to remove any organic contaminants from the surface of the film that are deposited after the growth when films were exposed to air before transferring them to the XPS chamber.…”

“…Ti 2p 3/2 spectrum consists of three peaks with binding energies 455.8, 457.1, and 458.7 eV that correspond to TiN, titanium oxynitride (TiN x O y ), and TiO 2 . [16,17,21,22] Similar peak fittings were performed for all the samples; the exact peak positions of Ti 2p 3/2 for all the samples are given in Table 2. Ti 2p 3/2 spectra for all the grown films (S0-S7) overlaid on top of each other are shown in Figure 5b.…”

“…Although oxygen was not intentionally introduced in the chamber during the growth but residual oxygen is always present in the sputtering chamber and nitrides are often grown as oxynitrides. [16,17] Chromium doping in titanium nitride results in the increase of the intensity of TiN peak compared to the intensity of TiO 2 peak. For sample S7, with the highest DC sputtering power of Cr target, the intensity of TiN peak becomes higher than the intensity of TiO 2 peak.…”

“…[10][11][12][13][14][15] TiN is a wide bandgap nitride semiconductor with high carrier concentration (%10 22 /cm 3 ) and exhibits excellent properties like hardness and anticorrosive properties but has not been studied much as dilute magnetic semiconductor. [14][15][16][17] Yan et al synthesized Fe-doped TiN nanocrystals and found them to be ferromagnetic at room temperature. [15] Maarouf et al reported room-temperature magnetoresistance for Fe-doped TiN thin films grown by RF/DC magnetron sputtering [16] and attributed the negative magnetoresistance in Fe-TiN films to the formation of ferromagnetically aligned magnetic polarons.…”