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Titanium nitride thin films were grown on Si(001) and fused silica substrates by radio frequency reactive magnetron sputtering. Post-growth annealing of the films was performed at different temperatures from 300 °C to 700 °C in nitrogen ambient. Films annealed at temperatures above 300 °C exhibit higher surface roughness, smaller grain size and better crystallinity compared to the as-grown film. Bandgap of the films decreased with the increase in the annealing temperature. Hall effect measurements revealed that all the films exhibit n-type conductivity and had high carrier concentration, which also increased slightly with the increase in the annealing temperature. A detailed depth profile study of the chemical composition of the film was performed by x-ray photoelectron spectroscopy confirming the formation of Ti-N bond and revealing the presence of chemisorbed oxygen in the films. Annealing in nitrogen ambient results in increased nitrogen vacancies and non-stoichiometric TiN films.

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Chromium‐doped titanium nitride thin films are deposited using RF/DC reactive magnetron co‐sputtering technique. Optical, chemical, surface morphology and magnetic properties of the deposited films are studied using spectrophotometry, X‐ray photoelectron spectroscopy, atomic force microscopy, and vibrating sample magnetometry, respectively. Films are prepared with different concentration of chromium by adjusting the sputtering power of magnetron using chromium target. A redshift in the bandgap of Cr‐TiN films is observed as a function of chromium concentration. X‐ray photoelectron spectroscopy confirms the presence of chromium in the films in third (Cr+3) and sixth (Cr+6) oxidation state. The films with lower concentration of chromium exhibit ferromagnetism with clear hysteresis loop at 3 K and at room temperature with higher saturation magnetization compared to the films grown with higher Cr concentration.