Halide perovskite
(HP) materials are actively researched for resistive
switching (RS) memory devices due to their current–voltage
hysteresis along with low-temperature processability, superior charge
mobility, and simple fabrication. In this study, all-inorganic RbPbI3 perovskite has been doped with Cl in the halide site and
incorporated as a switching media in the Ag/RbPbI3–x
Cl
x
/ITO structure, since
pure RbPbI3 is nonswitchable. Five compositions of the
RbPbI3–x
Cl
x
(x = 0, 0.3, 0.6, 0.9, and 1.2) films are
fabricated, and the conductivity was found to be increasing upon increase
in Cl concentration, as revealed by dielectric and I–V measurements. The device with a 20% chloride-substituted
film exhibits a higher on/off ratio, extended endurance, long retention,
and high-density storage ability. Finally, a plausible explanation
of the switching mechanism from iodine vacancy-mediated growth of
conducting filaments (CFs) is provided using conductive atomic force
microscopy (c-AFM). The c-AFM measurements reveal that pure RbPbI3 is insulating in nature, whereas Cl-doped films demonstrate
resistive switching behavior.