2003
DOI: 10.1016/j.solmat.2003.06.002
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Optical and photoconductive properties of SnS thin films prepared by electron beam evaporation

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Cited by 220 publications
(91 citation statements)
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“…All of the films analyzed have high absorption coefficients (a [ 10 4 cm -1 above the fundamental absorption). The band gaps were evaluated by extending linear part of the plots of (ahm) 2 versus hm [43]. The band gap of the Sn 1.32 S films formed at 200°C is 1.88 eV.…”
Section: Resultsmentioning
confidence: 99%
“…All of the films analyzed have high absorption coefficients (a [ 10 4 cm -1 above the fundamental absorption). The band gaps were evaluated by extending linear part of the plots of (ahm) 2 versus hm [43]. The band gap of the Sn 1.32 S films formed at 200°C is 1.88 eV.…”
Section: Resultsmentioning
confidence: 99%
“…Semiconductor SnS has an optical band gap value of 1.1 eV [3], a large optical absorption coefficient of >10 4 cm -1 [4][5][6] and a high photoelectric conversion efficiency (up to 25%) [7,8].…”
Section: Introductionmentioning
confidence: 99%
“…Conventional SnS synthetic techniques have been applied most often for the fabrication of bulk SnS films [4][5][6][8][9][10][11][12][13][14]. There have been a number of reports of syntheses of nanocrystalline SnS.…”
Section: Introductionmentioning
confidence: 99%
“…Several techniques have been employed for preparing SnS films namely: SILAR (successive ionic layer adsorption and reaction) [5], chemical bath deposition (CBD) [6], electron beam evaporation [7], Spray pyrolysis [8], etc. Among these techniques, spray pyrolysis is a versatile and low-cost one.…”
Section: Introductionmentioning
confidence: 99%