Optical and structural characterization of inhomogeneities in a-Si:H TO μc-Si transition

Effect of Deposition Conditions and Crystallinity of Substrate on Phase Transition of Hydrogenated Si Films

“…The growth process and the characteristics of a-Si:H and c-Si:H films have been studied using real-time spectroscopic ellipsometry (RTSE), infrared attenuated total reflection spectroscopy methods, [1][2][3] and Raman spectroscopy. [4][5][6] Previous works reported that the formation of crystalline phase could be engineered by carefully adjusting the R value during the PECVD of Si:H films. [7][8][9] It is also generally known that the deposition rate of Si:H films strongly depends on the deposition conditions, and a-Si:H films are deposited at much higher deposition rate than c-Si:H films with the PECVD method.…”