2007
DOI: 10.1063/1.2819092
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Optical capacitance-voltage characterization of charge traps in the trapping nitride layer of charge trapped flash memory devices

Abstract: Extracting the trap distribution in charge trapping layers of charge trap flash memory devices, an optical C-V method (OCVM) is proposed. Applying photons with λ=532nm to the oxide-nitride-oxide layer with 50∕60∕23Å in metal-oxide-nitride-oxide-semiconductor charge trap flash devices, the trap density in the charge trapping nitride layer is extracted to be 1.16×1018–1.67×1019cm−3eV−1 over the energy EC−Et=1.36–1.64eV. Combining sub-band-gap photons in C-V characterization, the OCVM method is free from the ther… Show more

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Cited by 6 publications
(3 citation statements)
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“…It may also be extracted using the data reported in [5,15] on the charged SiO 2 /Si 3 N 4 electret. It ranges approximately from 2.7 × 10 18 cm −3 to 3.8 × 10 18 cm −3 , which is within the ranges reported in [11,13], but by a factor of 2.5 to 4 less compared with the minimum trap density obtained in [12,14]. The trap density in the bulk of SiO 2 was not reported, to the best of our belief, but it can be evaluated from the data presented in the literature for the room temperature conditions.…”
Section: Corona Charging Of Single-and Double-layer Electretssupporting
confidence: 85%
See 1 more Smart Citation
“…It may also be extracted using the data reported in [5,15] on the charged SiO 2 /Si 3 N 4 electret. It ranges approximately from 2.7 × 10 18 cm −3 to 3.8 × 10 18 cm −3 , which is within the ranges reported in [11,13], but by a factor of 2.5 to 4 less compared with the minimum trap density obtained in [12,14]. The trap density in the bulk of SiO 2 was not reported, to the best of our belief, but it can be evaluated from the data presented in the literature for the room temperature conditions.…”
Section: Corona Charging Of Single-and Double-layer Electretssupporting
confidence: 85%
“…Therefore, an additional question arises, namely, what limits the surface potential in such case, either the trap density or the breakdown field of the electret. The trap density reported for Si 3 N 4 widely ranges from 10 18 to 1.7 × 10 19 cm −3 [11][12][13][14], as was obtained in studies of nonvolatile memories. It may also be extracted using the data reported in [5,15] on the charged SiO 2 /Si 3 N 4 electret.…”
Section: Corona Charging Of Single-and Double-layer Electretsmentioning
confidence: 72%
“…To obtain the interface states energy distribution, a variety of two-terminal, MOS-based devices are used, and both silicon types (n and p) are necessary to obtain the states distribution across the entire silicon band gap energy range. [1][2][3][4][5][6] This paper presents a contactless method capable of measuring the states distribution at the Si-SiO 2 interface using only one (n or p) silicon sample. The method is based on a combination of a non-contact corona gate method, 7,8 with a low-frequency capacitance voltage (LFCV), and conventional electrostatic modeling.…”
mentioning
confidence: 99%