Optical characteristics of 1.55μm GaInNAs multiple quantum wells

Abstract

We report the optical characterization of high-quality 1.55μm GaxIn1−xNyAs1−y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy. Their energies are consistent with theoretical fitting based on the band anticrossing model. It is also confirmed by detailed spectroscopic measurements that the addition of even a small amount of In to GaN0.01As barriers remarkably improves the optical characteristics of the QWs. The results imply that although strain-compensated GaInNAs MQWs provide a feasible approach to realizing 1.55μm optical emission, the relative lattice mismatch between the wells and barriers is critical to the optical quality of the related QWs.

Role of Sb in the growth and optical properties of 1.55μm GaInN(Sb)As∕GaNAs quantum-well structures by molecular-beam epitaxy

“…6,7 The introduction of strain-compensated GaNAs layers between GaInNAs and GaAs appears to be an effective approach to relieving the difficulty, 8 but for 1.55 m structures the increased stress at the interface between GaNAs and GaInNAs has proven unfavorable for the interface quality. 9 Additional insertion of strain-mediated GaIn͑N͒As layers is feasible for the improvement of interface quality and photoluminescence efficiency, 10,11 but this again increases the total compressive strain in the whole structure and is thus undesirable for the growth of multiQWs. Recently several groups have employed antimony as a surfactant to assist the growth of GaInNAs and succeeded in the realization of 1.55 m photoluminescence ͑PL͒ and lasing at room temperature, [12][13][14][15] but there has been very little investigation into the effect of Sb on the optical and structural properties.…”

High‐brightness long‐wavelength semiconductor disk lasers

“…Rapid thermal annealing (RTA) is often used in post-growth to remove point defects form the material. To date, the longest reported room temperature emission wavelength in GaInNAs is around 1550 nm [65,66].…”

Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials

“…Quantum Dot (QD) devices with inhomogeneous InAs QDs grown on GaAs has exhibited broad band gain, which has been exploited for multiwave amplification [1]. GaInNAs/GaAs Quantum Well (QW) devices have demonstrated 1.3 µm laser emission [2,3], reduced temperature sensitivity [4] and can be lattice matched to GaAs [2,3].The observed broad band gain has been demonstrated to amplify across its band [5] and to amplify four independent wavelengths simultaneously in the linear regime [6]. Having previously modelled QD amplifiers [7] we will model GaInNAs amplifiers in this paper.…”