Optical control of ferroelectric switching and multifunctional devices based on van der Waals ferroelectric semiconductors

Abstract

Combining the electrical and optical control of the polarization, we demonstrate multifunctional devices based on van der Waals ferroelectric In2Se3, which can serve as a logic switch, photodetector, electronic memory, and photonic memory concurrently.

Ferroelectric α‐In2Se3 Wrapped‐Gate β‐Ga2O3 Field‐Effect Transistors for Dynamic Threshold Voltage Control

“…The Q m and Q n can be derived from the ferroelectric memory window (∆ V ) in Figure S2d, Supporting Information using electrostatic model (see Simulation of Polarization Charge Density section in Supporting Information). [ 34,35 ] Figure 4b shows the simulated distributions of Q fe and Q m as a function of maximum gate‐bias ( V C ). The amount of Q fe increases significantly at V C = ≈3 V, corresponding to a coercive voltage for the α‐In 2 Se 3 /Al 2 O 3 MOS structure in the top‐gate α‐In 2 Se 3 FET.…”

Indium Selenide (In2Se3) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

“…The PFM images exhibite two electrically written domain patterns, where the bright field (write) and dark field (erase) region were created using +6 and −7 V, respectively. The respective OOP and IP phase maps are shown in Figure 9(g–h) [125] . Moreover, the artificial ferroelectric domains are found to be intact over 24 hours in atmospheric conditions [119] .…”

“…Xu et al. demonstrated a multifunctional device (i. e., logic gate, photodetector, electronic memory and photonic memory) by modulating the electric polarization state in In 2 Se 3 using both optical and electrical stimuli (Figure 18(g)–(h)) [125] . Thick gate oxide often led to a clockwise hysteresis loop due to the partial polarization switching in In 2 Se 3 .…”

Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices

“…In addition to Gr and BP, there is a new family of 2D material being developed, that is based on TMDCs, which has recently attracted greater attention because of its natural low bandgap. Up to now, TMDCs including MoS 2 , [58,[156][157][158][159][160] In 2 Se 3 , [161][162][163] [119] Copyright 2017, IOP Publishing Ltd.…”

“…In addition to Gr and BP, there is a new family of 2D material being developed, that is based on TMDCs, which has recently attracted greater attention because of its natural low bandgap. Up to now, TMDCs including MoS 2 , [ 58,156–160 ] In 2 Se 3 , [ 161–163 ] WS 2 , [ 65,164 ] In 2 S 3 , [ 161,165 ] ReS 2 , [ 166 ] WSe 2 , [ 25 ] and InSe, [ 34 ] etc., have been explored to develop the next generation photodetecting and optoelectronic synaptic devices.…”