Optical-digital correlator with increased dynamic range using spatially varying pixels exposure technique

Konnik, Mikhail V.; Manykin, E. A.; Starikov, Sergey N.

doi:10.3103/s1060992x09020015

Cited by 8 publications

(12 citation statements)

References 15 publications

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“…2c, we found that the linear dynamic range (LDR), which represents the ratio of the full-well charge capacity to the dark readout charge within the linear region, was found to be 4,700 (73.4 dB) after a 1,500 ms exposure time. This LDR is larger or comparable to consumer grade Si-based CCDs (60∼70 dB)40, providing the possibility of multi-level detections with a 12-bit analog-digital converter. These results strongly indicate that the high sensitivity is achieved and maintained over a wide exposure timescale because the charge quantity is directly associated with the dosage.…”

Section: Resultsmentioning

confidence: 89%

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

et al. 2017

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Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ∼4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 104 s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices.

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Section: Resultsmentioning

confidence: 89%

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

et al. 2017

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“…As in many works, [24][25][26]32,33 we use a linear response function for the imaging sensor in the Penrose layout, which implies that fð·Þ is linear before reaching the saturation threshold. So Eq.…”

Section: Penrose Spatially Varying Exposures Imagingmentioning

confidence: 99%

“…21,24,32,33 There are two aspects for the design of SVE arrays. Only a few literatures consider this problem.…”

Section: Introductionmentioning

confidence: 99%

“…Only a few literatures consider this problem. 21,24,32 The second one is the assignment of sensitivities (e.g., periodic or aperiodic). The first one is the number of sensitivities used.…”

Section: Introductionmentioning

confidence: 99%

“…The first one is the number of sensitivities used. Based on the difference of color filters in sensitivity of monochrome light, Konnik et al 32 regarded the regular Bayer color filter array (CFA) 30 as an SVE array for monochrome imaging [ Fig. But a larger number of used sensitivities will give a lower sampling rate at each sensitivity, which is a trade-off between the spatial and brightness resolutions.…”

Section: Introductionmentioning

confidence: 99%

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Penrose high-dynamic-range imaging

Bai

Lin

et al. 2016

J. Electron. Imaging

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High-dynamic-range (HDR) imaging is becoming increasingly popular and widespread. The most common multishot HDR approach, based on multiple low-dynamic-range images captured with different exposures, has difficulties in handling camera and object movements. The spatially varying exposures (SVE) technology provides a solution to overcome this limitation by obtaining multiple exposures of the scene in only one shot but suffers from a loss in spatial resolution of the captured image. While aperiodic assignment of exposures has been shown to be advantageous during reconstruction in alleviating resolution loss, almost all the existing imaging sensors use the square pixel layout, which is a periodic tiling of square pixels. We propose the Penrose pixel layout, using pixels in aperiodic rhombus Penrose tiling, for HDR imaging. With the SVE technology, Penrose pixel layout has both exposure and pixel aperiodicities. To investigate its performance, we have to reconstruct HDR images in square pixel layout from Penrose raw images with SVE. Since the two pixel layouts are different, the traditional HDR reconstruction methods are not applicable. We develop a reconstruction method for Penrose pixel layout using a Gaussian mixture model for regularization. Both quantitative and qualitative results show the superiority of Penrose pixel layout over square pixel layout.

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Polarization‐Resolved Broadband MoS₂/Black Phosphorus/MoS₂ Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio

Liu

Zou

et al. 2021

Adv Funct Materials

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The rapidly emerging requirement for device miniaturization and structural flexibility make 2D semiconductors and their van der Waals (vdWs) heterostructures extremely attractive for nonvolatile optoelectronic memory (NOM) applications. Although several concepts for 2D NOM have been demonstrated, multi‐heterojunction devices capable of further improving storage performance have received little attention. This work reports a concept for MoS2/black phosphorus (BP)/MoS2 multi‐heterojunction NOM with artificial trap sites through the BP oxidation, in which the trapped holes at BP/POx interface intrigue a persistent photoconductivity that hardly recovers within the experimental time scales (exceeding 104 s). As a result of the interfacial trap‐controlled charge injection, the device exhibits excellent photoresponsive memory characteristics, including a record high detectivity of ≈1.2 × 1016 Jones, a large light‐to‐dark switching ratio of ≈1.5 × 107, an ultralow off‐state current of ≈1.2 pA, and an outstanding multi‐bit storage capacity (11 storage states, 546 nC state–1). In addition, the middle BP layer in the multi‐heterojunction enables broadband spectrum distinction (375–1064 nm), together with a high polarization ratio of 8.4. The obtained results represent the significant step toward the high‐density integration of optoelectronic memories with 2D vdWs heterostructures.

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Optical-digital correlator with increased dynamic range using spatially varying pixels exposure technique

Cited by 8 publications

References 15 publications

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Penrose high-dynamic-range imaging

Polarization‐Resolved Broadband MoS₂/Black Phosphorus/MoS₂ Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio

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Optical-digital correlator with increased dynamic range using spatially varying pixels exposure technique

Cited by 8 publications

References 15 publications

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Penrose high-dynamic-range imaging

Polarization‐Resolved Broadband MoS2/Black Phosphorus/MoS2 Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio

Contact Info

Product

Resources

About

Polarization‐Resolved Broadband MoS₂/Black Phosphorus/MoS₂ Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio