Optical, electrical and mechanical properties of TiN thin film obtained from a TiO2 sol-gel coating and rapid thermal nitridation

Abstract

This study reports the optical, electrical and mechanical properties of TiN films prepared by direct rapid thermal nitridation process from a photo-patternable TiO 2 sol-gel layer. The sol-gel approach is compatible to non-planar and large substrates and allows the micro-nanotexturing of crystallized TiN surfaces in a significantly short time, large scale and at a lower cost compared to TiN layer deposition from existing and conventional processes (CVD, PVD, ALD…). In this paper, the optical measurements are carried out by optical spectroscopy in the UV, visible and near-IR region and by ellipsometry. The resistivity and the conductivity are estimated by four-point probe method, while hardness is characterized by nano-indentation experiments. The results indicate that the TiN thin film made by sol-gel method and rapid thermal nitridation are very promising for the manufacturing of optical metasurfaces devices or new plasmonic materials.

Versatile Micro and Nano Patterning Technique for TiO2 and TiN‐Based Sol–Gel Thin Films

“…We recently presented an innovative and direct rapid thermal nitridation (RTN) process that enabled us to obtain crystallized TiN surfaces from a photo‐patternable TiO 2 sol–gel coating using relatively soft nitriding conditions. [ 13 ] The process has the advantage of being compatible with a wide range of substrates, for the formation of TiN layers with good optical, electrical, and mechanical properties, [ 14 ] comparable to those obtained using standard processes. In this paper, we describe how we produced complex 2D patterns from a sol–gel solution of TiO 2 using different patterning techniques (mask lithography, colloidal lithography, and direct writing) in the micron and sub‐micron range.…”

Enhanced Conductivity and Microstructure in Highly Textured TiN1–x/c-Al2O3 Thin Films

“…9,16−18 Sol−gel based approaches of depositing a TiO 2 film with subsequent nitridation achieved 40 nm TiN films with a 1510 μΩcm resistivity. 19 In most cases, these TiN thin films exhibit a polycrystalline microstructure with a columnar grain growth 20−22 and grain boundaries (GBs) that run along the entire thin film thickness. 23 This microstructure is commonly discussed as the source for reduced conductivity in TiN thin films.…”

“…These films exhibit resistivity values ranging from 14 to 1000 μΩcm for film thicknesses above 40 nm. ,− Sol–gel based approaches of depositing a TiO 2 film with subsequent nitridation achieved 40 nm TiN films with a 1510 μΩcm resistivity . In most cases, these TiN thin films exhibit a polycrystalline microstructure with a columnar grain growth − and grain boundaries (GBs) that run along the entire thin film thickness .…”

Synthesis of vanadium nitride from vanadium spinel by synchronous reduction and nitridation with ammonia energy

“…Other nitrides can also be obtained by nitridation with ammonia, such as ferrovanadium nitride (FeVN), ferrochromium nitride (FeCrN), titanium nitride (TiN) thin film, alumina nitride (AlN) nanopowders, and so on. [14][15][16][17] NH 3 gas is a metastable compound with high nitrogen potential at high temperatures. 18 The bond energy of N-H (about 450.2 kJ/mol) is distinctly lower than that of N ≡ N (945 kJ/mol), which must be overcome for nitridation.…”

“…Gao et al 12,13 prepared hybrid supercapacitor by nitriding metallic copper and nickel with NH 3 gas. Other nitrides can also be obtained by nitridation with ammonia, such as ferrovanadium nitride (FeVN), ferrochromium nitride (FeCrN), titanium nitride (TiN) thin film, alumina nitride (AlN) nanopowders, and so on 14‐17 . NH 3 gas is a metastable compound with high nitrogen potential at high temperatures 18 .…”