Optical, Electrical and Photoresponse Properties of Si-based Diodes with NiO-doped TiO2 Film Prepared by Sol-gel Method

Tataroğlu, A.; Al‐Sehemi, Abdullah G.; İlhan, Mustafa; Al-Ghamdi, Ahmed A.; Yakuphanoğlu, F.

doi:10.1007/s12633-016-9548-z

Cited by 19 publications

(5 citation statements)

References 31 publications

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“…The n , Φ B , and R s values were reported between 14.96 and 21.96, 0.569 and 0.654 eV, and 0.34 and 6.7 kΩ (under dark condition), respectively. Tataroğlu et al [ 60 ] deposited nickel‐doped TiO 2 on n‐Si by a spin coating technique. They calculated n and Φ B values in the range of 3.2–2.2 and 0.81–0.86 eV, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…This photocurrent value of 10% Li:TiO 2 /p‐Si diode at −5 V under 30 mW cm −2 is higher than the Al/TiO 2 /p‐Si structure with a value of ≈10 −5 A under 100 mW cm −2 , [ 63 ] the TiO 2 :ZnO/p‐Si structure with a value of ≈5 × 10 −5 A under 100 mW cm −2 [ 70 ] and lower than 5% coumarin:TiO 2 /p‐Si with a value of 1.33 × 10 −4 A, [ 61 ] and NiO:TiO 2 /n‐Si with a value of 5.25 × 10 −4 A. [ 60 ] Das et al [ 71 ] fabricated indium tin oxide (ITO)/TiO 2 /Al and ITO/reduced graphene oxide (rGO)–TiO 2 /Al Schottky diodes by the spin‐coating method. As a result of transient photocurrent measurements, they reported that the photosensitivity of the ITO/rGO–TiO 2 /Al increased by about 42% compared with the ITO/TiO 2 /Al diode.…”

Section: Resultsmentioning

confidence: 99%

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The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Rüzgar

2020

Physica Status Solidi (a)

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TiO 2 has received intense attention for optoelectronic applications due to its excellent properties, such as non-toxicity, low cost, and simple preparation. Herein, the influence of Li doping both on the structural and optical characteristics of TiO 2 thin films and on optoelectronic properties of TiO 2-based photodiodes is investigated. The root-mean-square (RMS) roughness values obtained from the atomic force microscopy (AFM) results and the optical bandgap energies calculated from the Tauc method vary between 3.40 and 24.53 nm and between 3.58 and 3.75 eV depending on the increase in Li doping, respectively. The ideality factor (n) values of the diodes, which provided information about the performance of diodes, are calculated between 5.92 and 9.74. The lowest n value of 5.92 is obtained for 2% Li-doped diode. All the fabricated diodes demonstrate a good photodiode behavior, and the maximum photoresponsivity value of 6.74 Â 10 À2 A W À1 is obtained for 10% Li:TiO 2. In addition, the C-V, G-V, and R s-V characteristics of diodes are examined for different frequencies. Li doping has improved the optoelectrical performance of the TiO 2-based photodiodes. Thus, the Li:TiO 2-based photodiode can be a candidate for optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Rüzgar

2020

Physica Status Solidi (a)

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“…Without any further process optimizations an ideality factor of η = 4.4 was determined for this diode structure (Figure S7, Supporting Information). Large ideality factor values > 2 were reported previously [60,61] and indicate, e.g., series resistance, interface interdiffusion, or a strained interface.…”

Section: Film Propertiesmentioning

confidence: 51%

Conversion of ALD CuO Thin Films into Transparent Conductive p‐Type CuI Thin Films

Weiß

Goldmann

Kettunen

et al. 2022

Adv Materials Inter

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Copper iodide (CuI) is a high‐performance p‐type transparent semiconductor that can be used in numerous applications, such as transistors, diodes, and solar cells. However, the lack of conformal and scalable methods to deposit CuI thin films limits its establishment in applications that involve complex‐shaped and/or large substrate areas. In this work, atomic layer deposition (ALD) is employed to enable scalable and conformal thin film deposition. A two‐step approach relying on ALD of CuO and its subsequent conversion to CuI via exposure to HI vapor at room temperature is demonstrated. The resulting CuI films are phase‐pure, uniform, and of high purity. Furthermore, CuI films on several substrates such as Si, amorphous Al2O3, n‐type TiO2, and γ‐CsPbI3 perovskite are prepared. With the resulting n‐TiO2/p‐CuI structure, the easy and straightforward fabrication of a diode structure as a proof‐of‐concept device is demonstrated. Moreover, the successful deposition of CuI on γ‐CsPbI3 proves the compatibility of the process for using CuI as the hole transport layer in perovskite solar cell applications in the nip‐configuration. It is believed that the ALD‐based approach described in this work will offer a viable alternative for depositing transparent conductive p‐type CuI thin films in applications that involve complex high aspect ratio structures and large substrate areas.

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“…Due to these properties, it finds use in many electrical and optoelectronic applications [9,10]. NiO is another promising p-type metal oxide semiconductor in electronic and optoelectronic devices due to its excellent optoelectronic properties, wide band gap (3.6-4.0 eV), low cost, high chemical and thermal stability [11][12][13][14]. The properties of photodiodes can be modified and improved by doping with a different element.…”

Section: Introductionmentioning

confidence: 99%

Production and Characterization of AlNiOZnOp-SiAl Composite Photodiodes for Solar Energy Tracking Systems

GÜRGENÇ

Di̇ki̇ci̇

Aslan

2022

Turkish Journal of Science and Technology

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In present study, NiO:ZnO thin films in molar ratios of 1:0, 0:1, 3:1, 1:1 and 1:3 were formed on p-Si layers with Aluminium (Al) bottom contact. The dynamic sol-gel spin coating method was used as coating method. The Al top contacts were deposited on thin films and Al/NiO:ZnO/p-Si/Al photodiodes were fabricated. The structural and morphological properties of the photodiodes were determined by X-ray diffraction (XRD), emission scanning electron microscopy (FE-SEM), and energy dispersive X-ray spectroscopy (EDX). The photoresponse and electrical properties of the produced photodiodes were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Al/NiO:ZnO/p-Si/Al photodiodes were successfully fabricated. It was determined that the thin films were composed of nanostructures. All photodiodes are sensitive to light. It was seen that the photosensitivity of composite photodiodes was higher than the pure photodiodes and photosensitivity decreased as the ZnO ratio increased. It was determined that the most sensitive photodiode to light was the composite photodiode with a NiO:ZnO ratio of 3:1, and the highest photosensitivity was measured as 3.12 x 10 3 at 100 mW/cm 2 light intensity in this photodiode. In all photodiodes, the capacitance values decreased as the frequency increased. The results show that by changing the NiO:ZnO ratio, the photoresponse and electrical parameters of the photodiodes can be controlled and the produced photodiodes can be used as a photosensor in solar tracking systems and optoelectronic applications.

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Optical, Electrical and Photoresponse Properties of Si-based Diodes with NiO-doped TiO2 Film Prepared by Sol-gel Method

Cited by 19 publications

References 31 publications

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Conversion of ALD CuO Thin Films into Transparent Conductive p‐Type CuI Thin Films

Production and Characterization of AlNiOZnOp-SiAl Composite Photodiodes for Solar Energy Tracking Systems

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Optical, Electrical and Photoresponse Properties of Si-based Diodes with NiO-doped TiO2 Film Prepared by Sol-gel Method

Cited by 19 publications

References 31 publications

The Optoelectrical Properties of Li: TiO2/p‐Si Photodiodes for Various Li Doping

The Optoelectrical Properties of Li: TiO2/p‐Si Photodiodes for Various Li Doping

Conversion of ALD CuO Thin Films into Transparent Conductive p‐Type CuI Thin Films

Production and Characterization of AlNiOZnOp-SiAl Composite Photodiodes for Solar Energy Tracking Systems

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The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping