1988
DOI: 10.1109/3.14369
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Optical gain in a strained-layer quantum-well laser

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Cited by 173 publications
(79 citation statements)
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“…In order to realize this potential, an understanding of active medium properties and dependences is important. An expeditious way to expand our knowledge base and gain an understanding of the underlying physics governing active region behavior is with a microscopic gain model, where the influences of the band structure, as well as the dependences on wavelength and carrier density, are described [24]- [26].…”
Section: A Gain Structurementioning
confidence: 99%
“…In order to realize this potential, an understanding of active medium properties and dependences is important. An expeditious way to expand our knowledge base and gain an understanding of the underlying physics governing active region behavior is with a microscopic gain model, where the influences of the band structure, as well as the dependences on wavelength and carrier density, are described [24]- [26].…”
Section: A Gain Structurementioning
confidence: 99%
“…It suggests not only that the complex nature of the biaxial strain in the VB changes the confinement but that it is also accomplished with a strong HH and LH band mixing that cannot be ignored. 15 For structure ͑c͒, in Fig. 3͑c͒, the transition e 0 -h 0 involves the hole ground state of the dominant LH character.…”
mentioning
confidence: 99%
“…A unity transformation applied to the 4 x 4 L-K Hamiltonian transforms it into two 2 x 2 decoupled Hamiltonians, making the analysis much simpler, as first suggested by Broido and Sham [21] (and outlined in more detail by Ahn and Chuang [22]). After adding the strained heavy hole and light hole finite barrier potential well profiles to the L-K Hamiltonian (in a manner equivalent to that described in [22]), we can solve for the quantum well envelope functions.…”
Section: Gain Modelmentioning
confidence: 94%
“…After adding the strained heavy hole and light hole finite barrier potential well profiles to the L-K Hamiltonian (in a manner equivalent to that described in [22]), we can solve for the quantum well envelope functions. The corresponding energy eigenvalues as a function of in-plane k vector are then found successively, producing the entire valence subband structure.…”
Section: Gain Modelmentioning
confidence: 99%