Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN

Semmelroth, Kurt; Berwian, Patrick; Schröter, Christopher; Leibiger, G.; Schönleber, Martin; Friеdrich, J.

doi:10.1016/j.jcrysgro.2015.07.019

Cited by 3 publications

(2 citation statements)

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“…For that purpose, IISB developed a new HVPE reactor concept. Among others one special feature of the new reactor was the possibility to measure optically in situ growth rate, layer thickness, and curvature of the GaN crystal for the first time. Such possibility had turned out to be very important for the development and control of the HVPE process.…”

Section: Development Of Wide Bandgap Semiconductors (Sic Gan Aln)—cmentioning

confidence: 99%

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Friеdrich

Müller

2019

Crystal Research and Technology

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This article describes the historic development of the Erlangen Crystal GrowthLaboratory CGL from its beginnings in 1974 at the chair of Materials of Electrical Engineering (Department of Material Science) of the University of Erlangen-Nuremberg until its current status as a large department "Materials" of the Erlangen Fraunhofer-Institute for Integrated Systems and Device Technology. Essential developments and scientific achievements in the various fields of crystal growth and epitaxy are presented from the early period until today.

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Section: Development Of Wide Bandgap Semiconductors (Sic Gan Aln)—cmentioning

confidence: 99%

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Friеdrich

Müller

2019

Crystal Research and Technology

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“…[9][10][11][12] It was reported that the bowing originates from the lattice mismatch between GaN and sapphire or from the stress generated by the coalescence of islands formed in the nucleation process, but the details in either case are unclear. 13,14) The bowing of the crystal causes non-uniformity in the off-angle over the crystal, resulting in a variation in the epitaxial layer characteristics and a decrease in device performance. Currently, a flat GaN substrate (R L > 10 m) is stably obtained by the ammonothermal method or by a Na-flux multipoint-seed (MPS) technique.…”

Section: Introductionmentioning

confidence: 99%

Influence of GaN/sapphire contact area on bowing of GaN wafer grown by the Na-flux method with a sapphire dissolution process

Yamada¹,

Imanishi²,

Murakami³

et al. 2020

Jpn. J. Appl. Phys.

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Although almost all freestanding GaN crystals exhibit concave bowing despite the elimination of a seed substrate, in the Na-flux multipoint-seed technique, a flat GaN substrate is stably obtained. Unlike other hetero-epitaxial growth techniques, this method allows the GaN/sapphire contact area to be minimized, and this in turn can lead to low curvature. However, the detailed mechanism underlying this effect on curvature is unclear. Therefore, in this study we investigated the relationship between the curvature and the GaN/sapphire contact area of freestanding GaN crystals with the use of a sapphire dissolution technique to eliminate thermal stress. As a result, the radii of the lattice curvatures of the grown crystals increased with a decrease in the contact area, and a GaN substrate with a large diameter (>2 in) and low curvature (>40 m) was obtained. These results may be attributed to grain coalescence on a flat seed.

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Stress evolution in thick GaN layers grown by HVPE

Lukin

Meissner

Friеdrich

et al. 2020

Journal of Crystal Growth

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Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN

Cited by 3 publications

References 20 publications

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Influence of GaN/sapphire contact area on bowing of GaN wafer grown by the Na-flux method with a sapphire dissolution process

Stress evolution in thick GaN layers grown by HVPE

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