Optical line shape functions in quantum-well and quantum-wire structures

Ohtoshi, T.; Yamanishi, Masamichi

doi:10.1109/3.73540

Cited by 52 publications

(15 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We have used here the Gaussian homogeneous lineshape function instead of the Lorentzian lineshape which results in an underestimation of the gain (Ohtoshi and Yamanishi 1991;Asada 1993). From the complex susceptibility in Eq.…”

Section: The Modelmentioning

confidence: 98%

“…It influences the dynamics of semiconductor and hence plays an important role in describing the device's performance under CW operation as well as frequency chirp under high speed modulation (Schneider et al 2004). The QD material is theoretically predicted to have small ∂(δn)/∂N at each resonant state (Schneider et al 2002) and results in α ≈ 0. This is inherent to QDs which have "atom like" properties with more confinement and a symmetric gain profile.…”

Section: Carrier Induced Materials Dispersion and αmentioning

confidence: 99%

“…This is inherent to QDs which have "atom like" properties with more confinement and a symmetric gain profile. As this property is marred by the inhomogeneity in dot size, the system is susceptible to carrier density dependent effects like the BFE (Oksanen and Tulkki 2003) and the many-body effects (Schneider et al 2002). The CW optical signal is applied at the resonant energy, E cv (ω cv ) = 0.…”

Section: Carrier Induced Materials Dispersion and αmentioning

confidence: 99%

See 2 more Smart Citations

Mode Amplification in Inhomogeneous QD Semiconductor Optical Amplifiers

2006

View full text Add to dashboard Cite

We present modelling results investigating the carrier dynamics of an SOA composed of an inhomogeneous array of quantum dots designed to produce broad gain amplification when optically pumped. We use a set of rate equations that describe the QDs inhomogeneity and include an energy dependent occupation factor within each inhomogeneously broadened level and numerically solve them with the propagation equation to investigate the amplification of optical signals in the waveguide. By treating the carrier filling according to the quasi-equilibrium distribution, we are able to investigate the effect of band-filling (BFE) on the gain and refractive index. The linewidth enhancement factor (α) is computed and analysed with respect to optical signal intensity as well as electrical current density.

show abstract

Section: The Modelmentioning

confidence: 98%

Section: Carrier Induced Materials Dispersion and αmentioning

confidence: 99%

Section: Carrier Induced Materials Dispersion and αmentioning

confidence: 99%

See 1 more Smart Citation

Mode Amplification in Inhomogeneous QD Semiconductor Optical Amplifiers

2006

View full text Add to dashboard Cite

show abstract

“…2 Theoretical approach with taking into account the non-Markovian processes can be served as substantiation of such a character of the emission line. 3,4 However, the known methods of the emission line calculations are complex and performed only numerically that makes difficulties for considering the influence of excitation conditions and parameters of semiconductor materials on the radiative recombination spectra.…”

Section: Introductionmentioning

confidence: 99%

On spectral line broadening in quantum-well heterostructure lasers

2006

View full text Add to dashboard Cite

Theoretical analysis of the emission line broadening in quantum-well lasers is carried out taking into account the Coulomb interaction of current carriers in the approach of two-dimensional electron-hole gas. The principal idea of the used method consists in the determination by means of the perturbation theory for many-body systems the functional behavior of tails of the emission line and in the subsequent extrapolation of the central part of the line according to a normalization requirement. Based on the obtained in the parabolic band approximation analytical shape function for the homogeneously broadened spectral line, the influence of various factors on the optical spectrum is analyzed. An explanation of the experimental data, including the spectral line asymmetry and the linewidth change versus temperature and power excitation, is given. Results of the numerical calculations are presented for quantum-well heterostructure laser diodes in the GaInAsSb-AlGaAsSb-GaSb system. Spectra of luminescence and gain in dependence on the quantum well width, temperature, and excitation level are examined. Spectrum transformation in the long-wavelength range and tuning curves for the GaSb-based laser emitters are also discussed. New possibility to overlap the spectral emission diapason of 2.2-2.9 µm is examined due to asymmetric multiple-quantum-well heterostructure configuration of the active region.

show abstract

“…In contrast to the approximation in [3], where the analysis of the spontaneous emission spectra was performed on the basis of an equation that describes interaction of one electron-hole pair with an effective medium and including the effects of broadening in a phenomenological form, in the model presented, two or three interacting electron-hole pairs are analyzed, whereas the broadening of emission lines occurs naturally due to the splitting of the energy levels of many-particle states. In the model of [3], factorization of many-particle operators in which one eliminates from consideration the non-Markovian effects that lead, as is known, to the deviation of the emission line profile from the Lorenzian one [4][5][6], is used. In direct solution of the many-particle Schro .. dinger equation, the necessity in factorization is absent, and the effects of non-Markovian dephasing of the interband polarization are taken into account implicitly.…”

mentioning

confidence: 99%

Calculation of the Spectrum of Spontaneous Emission by a Many-Particle Electron-Hole System with Coulomb Interaction of Carriers

Афоненко

2005

J Appl Spectrosc

View full text Add to dashboard Cite

A. A. AfonenkoUDC 539.293:621.382Based on numerical solution of the many-particle Schro .. dinger equation, the spontaneous emission spectrum of two and three interacting electron-hole pairs has been modeled. It is shown that the longwave edge of the emission spectrum decays exponentially and the asymmetry of the form factor of the lines of spontaneous transitions increases on decrease in temperature.

show abstract

Optical line shape functions in quantum-well and quantum-wire structures

Cited by 52 publications

References 28 publications

Mode Amplification in Inhomogeneous QD Semiconductor Optical Amplifiers

Mode Amplification in Inhomogeneous QD Semiconductor Optical Amplifiers

On spectral line broadening in quantum-well heterostructure lasers

Calculation of the Spectrum of Spontaneous Emission by a Many-Particle Electron-Hole System with Coulomb Interaction of Carriers

Contact Info

Product

Resources

About