Optical, morphological and electrical analysis of heterostructures PSi/c-Si and SiO2/MWCNTs/PSi/c-Si

Huerta, Natanael Victoriano; López, José Alberto Luna; Luz, José Álvaro David Hernández de la; Barojas, Estela Gómez; Lara, Alfredo Benítez; Leyva, Karim Monfil; Dominguez, Miguel A.

doi:10.1016/j.sna.2018.09.030

Cited by 4 publications

(3 citation statements)

References 41 publications

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“…Since these pores are not circular but have irregular shapes, the present structures can be defined as macroporous with diameters greater than 50 nm, as seen in Figure 3 b. Several investigations confirmed that the porosity of the PSi layer increases with etching time [ 18 ], as shown in Figure 2 .…”

Section: Resultsmentioning

confidence: 78%

“…On the other hand, the C=O functional groups present on the surface of CNTs has also been reported for the green emission origin [ 40 ]. It has been reported that the influence of Si-O, SiH x , and Si-OH bonds determines the shape of the PL spectra, and to a lesser extent, the influence of hydrogen-carbon surface created between the carbon atoms in the CNTs and H-Si in the PSi layer [ 18 ].…”

Section: Resultsmentioning

confidence: 99%

“…The CNTs and GO were provided by the Plasma Processing Laboratory, Department of Chemical Engineering, McGill University, Canada. The properties of the CNTs used in this work are described herein [ 18 ]. The CNTs were deposited using a spin coating method.…”

Section: Methodsmentioning

confidence: 99%

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Nanocomposites of Silicon Oxides and Carbon: Its Study as Luminescent Nanomaterials

et al. 2023

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In this work, hybrid structures formed by nanostructured layers, which contain materials, such as porous silicon (PSi), carbon nanotubes (CNTs), graphene oxide (GO), and silicon-rich oxide (SRO), were studied. The PSi layers were obtained by electrochemical etching over which CNTs and GO were deposited by spin coating. In addition, SRO layers, in which silicon nanocrystals are embedded, were obtained by hot filament chemical vapor deposition (HFCVD) technique. Photoluminescence (PL) spectra were obtained from the hybrid structures with which a comparative analysis was completed among different PL ones. The SRO layers were used to confine the CNTs and GO. The main purpose of making these hybrid structures is to modulate their PL response and obtain different emission energy regions in the PL response. It was found that the PL spectra of the CNTs/SRO and GO/SRO structures exhibit a shift towards high energies compared to those obtained from the PSi layers; likewise, the PSi/CNTs/SRO and PSi/GO/SRO structures show a similar behavior. To identify the different emission mechanisms originated by PSi, GO, CNTs, and SRO, the PL spectra were deconvolved. It was found that the Psi/CNTs/SRO and Psi/GO/SRO structures exhibit a PL shift in respect to the PSi layers, for this reason, the modulation of the PL emission of the structures makes these hybrid structures promising candidates to be applied in the field of photonic and electroluminescent devices.

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Section: Resultsmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 99%

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Nanocomposites of Silicon Oxides and Carbon: Its Study as Luminescent Nanomaterials

et al. 2023

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Optimizing fabrication and performance of liquid‐processed carbon nanotube photodetectors on various substrates

Lionas,

Velessiotis,

Pilatos

et al. 2024

Applied Research

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Carbon nanotubes (CNTs) have attracted interest for optoelectronic applications due to their unique electronic and optoelectronic properties. In particular, Multi‐Wall (MW) CNTs film acts as perfect photo‐collector surface with the possibility to tune the absorbance by controlling the film thickness. In this work, we demonstrate two types of hybrid Si‐MWCNTs photodetectors. The MWCNTs are solution‐ processed and deposited on n‐silicon substrate covered by two different dielectrics (Si3N4 or SiO2). The MWCNTs/SiO2/n‐Si device is used here as reference, since the SiO2/Si system is the most widely investigated structure in microelectronics. The electrical and optical characteristics of the reference device are compared with the corresponding of our basic MWCNTs/Si3N4 /n‐Si device. The MWCNTs are deposited on the substrate with the drop casting technique. Optical performance of the SiO2 device is comparable to the Si3N4 device thus revealing a quite interesting response under UV illumination. The Si3N4 device exhibited a peak Equivalent Quantum Efficiency (EQE) of 57% at 3μW of source illumination power, thus demonstrating a superior performance as compared to the SiO2 device (EQE of up to 55%, which is also promising for future applications). This performance can be attributed to the great absorption in UV region of CNTs layer. Apart from this technological goal, we also investigated how MWCNTs/Si3N4 or MWCNTs/SiO2 heterojunctions perform using standard electrical characterization techniques and how the presence of the CNTs change the dielectric characteristics of both substrates.This article is protected by copyright. All rights reserved.

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Ac conductivity and impedance spectroscopy study and dielectric response of MgPc/GaAs organic heterojunction for solar energy application

Benhaliliba

Asar

Missoum

et al. 2020

Physica B: Condensed Matter

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Optical, morphological and electrical analysis of heterostructures PSi/c-Si and SiO2/MWCNTs/PSi/c-Si

Cited by 4 publications

References 41 publications

Nanocomposites of Silicon Oxides and Carbon: Its Study as Luminescent Nanomaterials

Nanocomposites of Silicon Oxides and Carbon: Its Study as Luminescent Nanomaterials

Optimizing fabrication and performance of liquid‐processed carbon nanotube photodetectors on various substrates

Ac conductivity and impedance spectroscopy study and dielectric response of MgPc/GaAs organic heterojunction for solar energy application

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