Optical properties and deposition rate of sputtered Ta2O5 films deposited by ion-beam oxidation

Electrical and optical properties of tantalum oxide thin films prepared by reactive magnetron sputtering

“…In optical and optoelectronic applications, Ta 2 O 5 thin film is used as a high index and low loss materials for optical waveguides interference filters, high-reflective thin films mirrors for solar cells, charge coupled devices (CCDs), high power laser equipments and electroluminescent devices [1][2][3][4][5]. In microelectronic applications, Ta 2 O 5 thin film is used in highdensity dynamic-random-access memories (DRAMs) as well as in metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its high dielectric constant, high chemical, thermal stability, low leakage-current density and being compatible with the microelectronic processing technology [6,7].…”

Structural and electrical properties of Ta 2 O 5 thin films prepared by photo-induced CVD

“…Specifically, Ta 2 O 5 thin film was identified to be exceptionally appropriate for applications in high-density dynamic-random-access memories (DRAMs), as well as in metal-oxide-semiconductor field-effect transistors (MOSFETs) and transparent optical coatings (Huang et al 2002;Jolly et al 2003;Lee and Jan 2005) due to its potential properties, such as a wide bandgap, high dielectric constant and high refractive index (Jain et al 2005). Recently, many low temperature processing techniques employed to prepare these films have been studied.…”

Effects of the post-annealing ambience on the microstructure and optical properties of tantalum oxide films prepared by pulsed laser deposition

“…When the annealing temperature was as high as 600 • C, the transmittance of annealed film had a great increase. The transmittance reached 93% at its peak position, the very transmittance of bare quartz glass substrate at that wavelength, indicating the stoichiometric nature of Ta 2 O 5 [24]. The deficiency of oxygen in the tantalum oxide film was significantly improved after annealing at 600 • C and 20 Pa oxygen pressure.…”