Optical Properties and the Effective Carrier Mass in Degenerate Tin-Oxide (SnO2) Films Prepared by Chemical Vapour Deposition

G, Sanon; Rup, Raj; Mansing, A.

doi:10.1002/pssa.2211350224

Cited by 13 publications

(4 citation statements)

References 15 publications

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“…Even higher values for m* in excess of 0.55m 0 reported in some earlier papers [108][109][110] now seem implausible. The variation in effective mass in In 2 O 3 inferred from these consideration is comparable to that found for SnO 2 , where m Ã increases from 0.192m 0 at the bottom of the conduction band to 0.283m 0 for a carrier concentration of 3.5 × 10 20 cm −3 [111][112][113][114]. However, it is less pronounced than in narrower gap semiconductors such as InSb, where there is almost a threefold increase in the value of m Ã from 0.0136m 0 at the conduction band minimum to 0.0372m 0 for a doping level of 1.4 × 10 18 cm −3 [115].…”

Section: Bulk N-supporting

confidence: 71%

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Egdell

2015

Defects at Oxide Surfaces

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This article reviews the impact of defects and doping on the surface electronic structure of indium oxide, a wide gap oxide semiconductor which under degenerate doping becomes an important transparent conducting material. Topics covered include recent evidence for carrier accumulation at In 2 O 3 surfaces when there is a low bulk doping level and the profound effects of doping on core and valence photoemission spectra. The importance of molecular beam epitaxy in growth of single crystal samples is emphasised. IntroductionTransparent conducting oxides (TCOs) combine the usually orthogonal properties of optical transparency in the visible region with a high electrical conductivity [1][2][3][4]. TCOs already find widespread application as the window electrode in display devices including liquid crystal displays and electroluminescent display devices. A TCO electrode is also an essential component in many designs of solar cell [5,6]. In addition there is a growing interest in "transparent electronics" where TCO materials are employed in a more active role, for example in light emitting diodes [7] or lasers operating in the ultraviolet regime. The TCO market is worth around $1.6 billion per annum, with upward of 80 % of this sum based on LCD displays. Indium oxide (In 2 O 3 ) is amenable to n-type doping with Sn to give a prototype TCO usually-but somewhat misleadingly-referred to as indium tin oxide or ITO. At present ITO dominates the TCO market as the material offers a better combination of conductivity and transparency than alternatives such as doped ZnO or SnO 2 . In principle, doped CdO could achieve better performance [8], but Cd is highly toxic. Despite some recent reports of respiratory disease and even deaths [9] among workers in the ITO industry, indium is generally regarded as relatively

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Section: Bulk N-supporting

confidence: 71%

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Egdell

2015

Defects at Oxide Surfaces

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“…From Richardson modified plot we obtained F B0 and A * as 0.42 eV and 70 A cm −2 K −2 , respectively, without using the temperature coefficient of SBHs. The value of the Richardson constant corresponds to the effective mass of 0.58m 0 , with m 0 being the electron rest mass; this value is in according with reported in the literature by Sanon et al [45].…”

supporting

confidence: 80%

Effect of inhomogeneous Schottky barrier height of SnO₂nanowires device

Amorim¹,

Bernardo²,

Leite³

et al. 2018

Semicond. Sci. Technol.

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The current-voltage (I-V ) characteristics of metal-semiconductor junction (Au-Ni/SnO 2 /Au-Ni) Schottky barrier in SnO 2 nanowires were investigated over a wide temperature range. By using the Schottky-Mott model, the zero bias barrier height Φ B was estimated from I-V characteristics, and it was found to increase with increasing temperature; on the other hand the ideality factor (n) was found to decrease with increasing temperature. The variation in the Schottky barrier and n was attributed to the spatial inhomogeneity of the Schottky barrier height. The experimental I-V characteristics exhibited a Gaussian distribution having mean barrier heights F B of 0.30 eV and standard deviation σ s of 60 meV. Additionally, the Richardson modified constant was obtained to be 70 A cm −2 K −2 , leading to an effective mass of 0.58m 0 . Consequently, the temperature dependence of I-V characteristics of the SnO 2 nanowire devices can be successfully explained on the Schottky-Mott theory framework taking into account a Gaussian distribution of barrier heights.

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“…When ethanol vapor is passed, these molecules react with the pre-adsorbed oxygen species to form CO 2 and H 2 O [42] and release electrons back to the conduction band. The change in the carrier concentration, which is directly related to the number of ethanol molecules adsorbed on the sensor surface, affects on the refractive index of tin oxide [16,43]. The variation of modified cladding refractive index, in turn, change the boundary condition and effect on refracted and reflected light (see Section 2).…”

Section: Resultsmentioning

confidence: 98%