2014
DOI: 10.1016/j.spmi.2013.11.001
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Optical properties in symmetric and asymmetric Pöschl–Teller potentials under intense laser field

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Cited by 12 publications
(7 citation statements)
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“…[1] Recently, the effect of the ILF on the electronic and optical properties of quantum wells (QWs) has been particularly studied in detail by many authors. [2][3][4][5][6][7][8][9][10][11] It has been shown that the electronic and optical properties of the band edge-engineered QW structures can be significantly adjusted by modulating the ILF amplitude, mainly due to the changes of the confinement potential size and shape induced by the radiation. [2,6,[9][10][11] There are also reported experimental studies on the optical properties of QWs under ILF.…”
Section: Introductionmentioning
confidence: 99%
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“…[1] Recently, the effect of the ILF on the electronic and optical properties of quantum wells (QWs) has been particularly studied in detail by many authors. [2][3][4][5][6][7][8][9][10][11] It has been shown that the electronic and optical properties of the band edge-engineered QW structures can be significantly adjusted by modulating the ILF amplitude, mainly due to the changes of the confinement potential size and shape induced by the radiation. [2,6,[9][10][11] There are also reported experimental studies on the optical properties of QWs under ILF.…”
Section: Introductionmentioning
confidence: 99%
“…The development of high‐powered adjustable laser sources, such as free‐electron lasers, has motivated research activities on the interaction of ILFs with carriers in semiconductor nanostructures . Recently, the effect of the ILF on the electronic and optical properties of quantum wells (QWs) has been particularly studied in detail by many authors . It has been shown that the electronic and optical properties of the band edge‐engineered QW structures can be significantly adjusted by modulating the ILF amplitude, mainly due to the changes of the confinement potential size and shape induced by the radiation .…”
Section: Introductionmentioning
confidence: 99%
“…Low-dimensional electronic devices such as photo detectors, electro-optical modulators, and far-infrared laser amplifiers are pioneering products of advanced semiconductor technologies. Studies on the electronic and optical properties of these quantum structures have consequently become an essential branch of the concerning research as a lot of work have been devoted to the determination of the transition energies, the absorption coefficients, and the refraction index changes [1][2][3][4][5][6][7][8][9][10]. It has been shown that the potential profile of structure strongly affects the linear and nonlinear optical absorption coefficients [1][2][3].…”
Section: Introductionmentioning
confidence: 99%
“…It has been shown that the potential profile of structure strongly affects the linear and nonlinear optical absorption coefficients [1][2][3]. The role of external electric field on the electron location and the potential profile change created by a laser field was the subject of the coaxial wire research [3][4][5][6][7]. The wire containing parabolic and semi-parabolic quantum wells exhibits the properties that the variations of the resonance peaks increases with the increasing laser strength as they are shifted to lower energies [3][4].…”
Section: Introductionmentioning
confidence: 99%
“…The effect of intense laser field on the symmetric and asymmetric Pöschl-Teller potentials has been studied. It has been observed that the laser dressing parameter effectively narrows the well width as the boundaries of the well go to infinity [28]. A study on resonant tunneling tunable by long-wavelength radiation in a double-barrier heterostructure reports only the effects of the laser field on the well between the barriers [29].…”
Section: Introductionmentioning
confidence: 99%