Optical properties of a two-dimensional GaAs quantum dot under strain and magnetic field

Servatkhah, M.; Pourmand, R.

doi:10.1140/epjp/s13360-020-00773-2

Cited by 15 publications

(2 citation statements)

References 38 publications

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“…Pressure produces stress and strain in material. The strain-induced change of absorption coefficient or energy band gap are considered as the main cause of the significant change of refractive index [22,23].…”

Section: Resultsmentioning

confidence: 99%

A Comparative Analysis of Pressure Sensing Parameters for Two Dimensional Photonic Crystal Sensors Based on Si and GaAs

Dinodiya¹,

Bhargava²

2021

Silicon

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A pressure sensor based on two dimensional photonic crystal structure is presented. The structure considered for sensing is a lattice of air holes surrounded by semiconductor material. A waveguide with central microcavity is formed by filling air holes with semiconductor material. The sensing principle depends upon the shifting of central wavelength of peak towards higher wavelength region when the pressure is raised. The proposed pressure sensor can work in the range 0-5 GPa. Using this structure, two semiconductors, Si and GaAs, have been taken for analysis. It is found that shifting of resonance wavelength with pressure is more pronounced in GaAs than Si. In the dynamic range 0-5 GPa, sensitivity for sensor with Si is estimated as 1.674 nm/GPa while it is 17.00 nm/GPa for sensor with GaAs. The quality factor and figure of merit (FOM) is also found to be higher for GaAs sensor.

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Section: Resultsmentioning

confidence: 99%

A Comparative Analysis of Pressure Sensing Parameters for Two Dimensional Photonic Crystal Sensors Based on Si and GaAs

Dinodiya¹,

Bhargava²

2021

Silicon

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“…The pressure applied induces a certain strain and stress in the material. The major reason for a significant change in the refractive index of the material is the strain-induced change of the energy bandgap or the absorption coefficients [51,52].…”

Section: Comparative Analysis Of the Gaas Ge And Si-based Structuresmentioning

confidence: 99%

Pressure-dependent bandgap characteristics in photonic crystals with sensing applications

Sherawat,

Bokolia,

Sinha

2024

J. Opt.

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The present study elucidates a photonic crystal (PhC)-based pressure sensor exploiting the change in refractive index with pressure and the corresponding structural deformation of the dielectric material. The stress-sensitive refractive indices of the constituent materials of the PhC have been considered to study the effect of applied pressure on the photonic bandgap (PBG) characteristics of the structure. The designed pressure sensor, proposed using a two-dimensional hexagonal lattice arrangement of air holes in a dielectric slab, operates in the high-pressure range of 1–6 GPa. A comparative study of the PBG characteristics with the application of high pressure has been reported for three semiconducting materials—GaAs, Ge and Si, used for the dielectric slab in the proposed structure. GaAs is found to exhibit the highest sensitivity to pressure variations and shows more pronounced shifting of the midgap wavelength with pressure in comparison to Ge and Si. The largest PBG is seen in the Ge-based structure, closely followed by the GaAs and Si-based structures. The proposed structure is suitable for high-pressure sensing applications.

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Analyzing Normalized Binding Energy of GaAs Quantum Dot Containing Gaussian Impurity: Role of Noise

Bhakti,

Ghosh

2024

Physica Status Solidi (b)

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In the present study, the impurity binding energy (IBE) and the normalized IBE (NIBE) of GaAs quantum dot (QD) are meticulously scrutinized. The QD contains Gaussian impurity as dopant. Gaussian white noise, applied via two different routes (additive and multiplicative), also becomes part of the QD confinement potential. The IBE and NIBE exhibit (depending on presence/absence of noise, mode of entrance of noise and the given physical parameter undergoing change) steady growth, steady fall, and maximization. Over the whole study, the NIBE plots efficiently manifest some intricate features which IBE plots fail to do and establish their greater efficacy over the IBE plots in unveiling the influences of various physical parameters. The findings of the study appear to be quite pertinent in realizing the optical properties of low‐dimensional nanostructures containing impurity and under the aegis of noise.

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Optical properties of a two-dimensional GaAs quantum dot under strain and magnetic field

Cited by 15 publications

References 38 publications

A Comparative Analysis of Pressure Sensing Parameters for Two Dimensional Photonic Crystal Sensors Based on Si and GaAs

A Comparative Analysis of Pressure Sensing Parameters for Two Dimensional Photonic Crystal Sensors Based on Si and GaAs

Pressure-dependent bandgap characteristics in photonic crystals with sensing applications

Analyzing Normalized Binding Energy of GaAs Quantum Dot Containing Gaussian Impurity: Role of Noise

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