Optical Properties of Al- and Sb-Doped CdTe Thin Films

Al-Douri, A.A.J.; Al-Shakily, F. Y.; Alias, M. F. A.; Alnajjar, A.

doi:10.1155/2010/947684

Cited by 18 publications

(12 citation statements)

References 19 publications

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“…The transmittance spectra show a decrease when we change the doping materials (un doped, Sb, Al and Ag), respectively because of the effect of impurity atoms, which is working on the composition of localized levels in the energy gap. This result similar to the result described by [15]. The absorbance spectrum of CdTe films before and after doping is shown in Figures 5.…”

Section: Materials and Methodologysupporting

confidence: 90%

“…The absorbance spectrum of CdTe films before and after doping is shown in Figures 5. The absorbance spectrum shifts to longer wavelengths with use several of doping materials for all the samples and the absorbance increases after doping with several materials (Sb, Al and Ag), respectively, and this may be due to improving the crystallite size and decreasing the transmittance, which agree with the results obtained from [15]. From Figure 6 we can see the behavior reflectance spectrum of Cadmium Telluride films doped with different materials (Sb, Al and Ag) as a function of wavelength.…”

Section: Materials and Methodologysupporting

confidence: 86%

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Depending the Structure and Optical Properties of Cadmium Telluride Films on the Doping process

Khudayer¹

2018

MJS

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The purpose of the present paper is to study the effect of doping by different materials on the structure and the optical properties of Cadmium Telluride films which prepared by rate deposition (4.21 nmn/sec) and thickness (≈ 200 nm) in vacuum by use thermal evaporation technique at a substrate temperature (300K), we are studying the effect of doping by different material (Antimony, Aluminum and Silver) on the structural1and optical2 properties of CdTe thin films. The structural properties of these films have been studied by using X-ray diffraction methods. The optical measurements indicated that Cadmium Telluride films have a direct optical energy gap (Egopt), and it decreases when we doped this films by different materials (Sb, Al and Ag) with the same ratio doping. The optical constants refractive index (n), extinction coefficient (k), absorption coefficient (α) and dielectric constants (r and i) were also studied.

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Section: Materials and Methodologysupporting

confidence: 90%

Section: Materials and Methodologysupporting

confidence: 86%

Depending the Structure and Optical Properties of Cadmium Telluride Films on the Doping process

Khudayer¹

2018

MJS

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“…CdTe has a high absorption coefficient (larger than 10 5 cm -1 at wavelengths around 700 nm), so that only thin film layers (a few microns) are needed for the absorption of the most of the solar spectra photons with energy higher than the band gap. CdTe has the ability to be doped both n-and p-type and the possibility of variety of preparation techniques such as thermal evaporation which often preferred because it offers large possibilities to modify the deposition condition [1,4,5].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Annealing on the Structural, Electrical and Optical Properties of CdTe Thin Films

Al-Ali¹,

Ali²,

Al-Haddad³

2013

JNUS

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CdTe Thin films were deposited by thermal evaporation on glass substrates under vacuum of 2×10 -6 mbar. The annealing has been done under vacuum 10 -3 mbar at (303,373,423,473) K annealing temperature. The structure was investigated by XRD technique. It is found that the structure for all samples (as-deposited and annealed) is polycrystalline. The d.c. electrical conductivity was investigated and attributed to two mechanisms. The activation energy Ea increases from 0.13 to 0.55eV as annealing temperature increases from 303 to 473K. The a.c. conductivity reveals that the dependence of activation energy Ew on frequency is larger than that on temperature. Ew increases from 0.11 to 0.18eV as annealing temperature increases from 303 to 473K. Optical studies showed that optical energy gap increases with increasing annealing temperature from 1.4eV at 303K to 2.15eVat 473K.Keyword : CdTe thin films , electrical and optical properties of CdTe thin films.

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“…1.55 eV [9][10][11][12][13] the visible transmittance of the samples is very low. Due to this low transmittance its measurement was very difficult, therefore for these samples the study was focused in the interpretation of the Diffuse Reflectance spectra.…”

Section: Absorption Edge Red-shiftmentioning

confidence: 94%

“…Moreover, a dependence in the absorption edge position was observed for these samples with the NP size and CdS content in the samples [6][7][8]. CdTe is an II-VI semiconductor alloy with a BE between 1.47-1.53 eV [9][10][11][12][13] very close to the optimal BE for photovoltaic applications. Moreover, is possible to observe the split-off AE ca.…”

Section: Introductionmentioning

confidence: 99%

Optical absorption enhancement in sensitized ZnO nanorods for solar cells

et al. 2015

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RESUMENSe estudiaron las Propiedades Ópticas (PO) de Nanovarillas (NV) de ZnO sensibilizadas con diferentes semiconductores en nanoestructuras núcleo-corteza, comparándolas con las PO de NV de ZnO. Las medidas experimentales de Transmitancia y Reflectancia Difusa muestran un incremento en la absorción de luz en el espectro solar y la aparición de nuevos bordes de absorción (BA). Las medidas se compararon con simulaciones numéricas basadas en Aproximación de Medio Efectivo (Bruggeman). Las simulaciones corresponden con las medidas reproduciendo la dependencia con el contenido de sensibilizante. Para CdTe se observa un aumento de la absorción con la cantidad del sensibilizante, siendo los cambios mayores para iguales cambios en las fracciones de llenado respecto al CdS. Las mediciones experimentales muestran corrimientos en las posiciones de los BA entre 2.34 eV y 2.66 eV para CdS. Estos corrimientos no pueden explicarse sólo por cambios en el contenido de sensibilizante o por los efectos de confinamiento en las nanoestructuras. Similar es el comportamiento del BA de muestras sensibilizadas con CdTe que se ubica entre 1.31 eV y 1.36 eV, analizadas por Transmitancia, mientras que para las mismas muestras este BA se encuentra en 1.57 eV y 1.49 eV, respectivamente, según el método de Kubelka-Munk de la Reflectancia. Además se observa el BA de la banda split-off en 2.55 eV y 2.28 eV. Estos corrimientos pueden asociarse a un incremento de la absorción sub-bandgap debido al aumento del recorrido libre medio de la luz en la estructura.Palabras clave: Nanoestructuras, ZnO, Nanohilos, Celdas Solares ABSTRACTThe Optical Properties of ZnO Nanorods (NR) sensitized with different semiconductors in Core-Shell nanostructures were studied, comparing them with those of bare ZnO NR. Experimental measurements of Transmittance and Diffuse Reflectance show an increased light absorption at the solar spectrum and the appearances of new absorption edges (AE). The measurements are compared with numerical simulations based on Bruggeman Effective Medium Approximation. An increased absorption with the sensitizer content is observed. For similar changes in filling fractions, CdTe presents higher changes in absorption than CdS. Shifts in the AE are observed experimentally (e.g. between 2.34 eV and 2.66 eV for CdS). These shifts cannot be assigned to sensitizer content or confinement effects. A similar behaviour is observed for CdTe in which the AE measured by transmittance is between 1.31 eV and 1.36 eV, while the one obtained from Kubelka-Munk analysis of reflectance is, for the same samples, 1.57 eV and 1.49 eV, respectively. Moreover, the split-off AE is also observed at 2.55 eV and 2.28 eV. The observed large red-shifts could be associated with an enhancement of the subbandgap absorption due to an increase in the light free path at the core-shell nanostructure.PEREYRA, C.J.; FERRER, F.; GÓMEZ,C.; CAMPO, L.; MAROTTI, R.E.; MARTIN, F.; LEINEN, D.; BARRADO, J.R.; DALCHIE-LE, E.A. revista Matéria, v.20, n.3, pp. 747 -756, 2015. 748

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Optical Properties of Al- and Sb-Doped CdTe Thin Films

Cited by 18 publications

References 19 publications

Depending the Structure and Optical Properties of Cadmium Telluride Films on the Doping process

Depending the Structure and Optical Properties of Cadmium Telluride Films on the Doping process

The Effect of Annealing on the Structural, Electrical and Optical Properties of CdTe Thin Films

Optical absorption enhancement in sensitized ZnO nanorods for solar cells

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