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Thamm, A.; Brandt, O.; Ringling, J.; Trampert, A.; Ploog, K. H.; Mayrock, O.; Wünsche, H.‐J.; Henneberger, F.

doi:10.1103/physrevb.61.16025

Cited by 23 publications

(17 citation statements)

References 13 publications

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“…One explanation for this difference could be in a difference of internal electric fields, which Paskov et al 22 did not consider when discussing the hole escape from the Coulomb binding. Such fields, which could arise from different doping concentrations 25 or different distances between successive BSFs, 26 certainly exist in and around such BSFs, whatever their type-I or type-II alignment, as commented by Sun et al 27 Now, a binding energy of 18 meV seems quite small compared to the bulk value ͑26 meV͒ for a type-II exciton in such shallow and narrow quantum wells, especially if one considers the presence of electric fields that, for type-II structures, tend to minimize the electron-hole separation ͑see Fig. 10 of Ref.…”

Section: Localization Effectsmentioning

confidence: 99%

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Corfdir

Lefèbvre

Levrat

et al. 2009

Journal of Applied Physics

104

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We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth ͑ELO͒ GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonly encountered extended defect of a-plane GaN: I 1 basal stacking fault. Cathodoluminescence measurements show that these stacking faults are essentially located in the windows and the N-face wings of the ELO-GaN and that they can appear isolated as well as organized into bundles. Time-integrated and time-resolved photoluminescence, supported by a qualitative model, evidence not only the efficient trapping of free excitons ͑FXs͒ by basal plane stacking faults but also some localization inside I 1 stacking faults themselves. Measurements at room temperature show that FXs recombine efficiently with rather long luminescence decay times ͑360 ps͒, comparable to those encountered in high-quality GaN epilayers. We discuss the possible role of I 1 stacking faults in the overall recombination mechanism of excitons.

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Section: Localization Effectsmentioning

confidence: 99%

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Corfdir

Lefèbvre

Levrat

et al. 2009

Journal of Applied Physics

104

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show abstract

“…The high-energy shoulder in PL emission of the highly doped samples (see Fig. 1) could be related to a higher confined electron level in the QW, which might be pulled down in energy by BGR and possibly a potential distortion related to the electron filling [12]. An alternative explanation would be a local variation in well widths in the near surface region originating from the opening of dislocations in the MQW region.…”

Section: Stationary Plmentioning

confidence: 90%

Time resolved photoluminescence study of Si modulation doped GaN/Al_0.07Ga_0.93N multiple quantum wells

Haratizadeh¹,

Ḿonemar

Paskov

et al. 2004

Physica Status Solidi (b)

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The effects of the Si doping level on the recombination dynamics and carrier (exciton) localization in modulation doped GaN/Al 0.07 Ga 0.93 N multiple-quantum-well (MQW) structures were studied by means of photoluminescence (PL) and time-resolved PL measurements. All samples with different doping levels show a QW emission which is blue shifted with respect to the 3.48 eV PL peak from the GaN buffer layer. The decay time at the peak position remains nearly constant in the range of 320-420 ps at 2 K for all doping levels. For the undoped and low-doped samples (3 × 10 18 cm -3 ), which have less free electrons in the QWs, a non-exponential PL decay behaviour at 2 K is attributed to localized exciton recombination. The more highly doped samples (5 × 10 18 cm -3 to 10 20 cm -3) show almost exponential decay curves at 2 K, suggesting the recombination of free electrons and localized holes. This localization effect appears even at high electron concentrations to cancel the expected lowering of the radiative lifetime with doping at 2 K; such a lowering is clearly observed at elevated temperatures for the highly doped samples, however. The internal polarization-induced fields of the medium and highly-doped samples are partly screened by the electrons originating from the doping in the barriers. Only the PL peak of the undoped and low-doped samples shows a redshift with time delay, related to the photogenerated carriers.

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“…A sizable red-shift of the ground-level transitions of wurtzite nitride semiconductor quantum wells has been observed by various groups [48,49,50,51] for increasing well width.…”

Section: Polarization Effects In Nitride Semiconductorsmentioning

confidence: 99%

Order Lattices of Quantum Dots

Speck¹,

Petroff²

2004

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Optical properties of heavily dopedGaN/(Al,Ga)Nmultipl

Cited by 23 publications

References 13 publications

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Time resolved photoluminescence study of Si modulation doped GaN/Al_0.07Ga_0.93N multiple quantum wells

Order Lattices of Quantum Dots

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Optical properties of heavily dopedGaN/(Al,Ga)Nmultipl

Cited by 23 publications

References 13 publications

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells

Order Lattices of Quantum Dots

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Product

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About

Time resolved photoluminescence study of Si modulation doped GaN/Al_0.07Ga_0.93N multiple quantum wells