Optical properties of indium-doped silicon reinspected

Schelter, W.; Hell, Waltraud; Helbig, R.; Schulz, M.

doi:10.1088/0022-3719/15/28/016

Cited by 17 publications

(6 citation statements)

References 27 publications

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“…We can obtain the electron and hole photoemission cross sections through theoretical calculation [16][17][18] or experimental measurement. [19,20] The above results indicate that the photoemission cross section plays a critical role in the IPV effect. We can assess the potential of an impurity used for the IPV effect to improve solar cell performance according to its electron and hole photoemission cross sections.…”

Section: Resultsmentioning

confidence: 68%

Photoemission cross section: A critical parameter in the impurity photovoltaic effect

et al. 2017

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A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic (IPV) effect for silicon solar cells doped with indium. The photovoltaic parameters (short-circuit current density, opencircuit voltage, and conversion efficiency) of the IPV solar cell were calculated as functions of variable electron and hole photoemission cross sections. The presented results show that the electron and hole photoemission cross sections play critical roles in the IPV effect. When the electron photoemission cross section is < 10 −20 cm 2 , the conversion efficiency η of the IPV cell always has a negative gain (∆η < 0) if the IPV impurity is introduced. A large hole photoemission cross section can adversely impact IPV solar cell performance. The combination of a small hole photoemission cross section and a large electron photoemission cross section can achieve higher conversion efficiency for the IPV solar cell since a large electron photoemission cross section can enhance the necessary electron transition from the impurity level to the conduction band and a small hole photoemission cross section can reduce the needless sub-bandgap absorption. It is concluded that those impurities with small (large) hole photoemission cross section and large (small) electron photoemission cross section, whose energy levels are near the valence (or conduction) band edge, may be suitable for use in IPV solar cells. These results may help in judging whether or not an impurity is appropriate for use in IPV solar cells according to its electron and hole photoemission cross sections.

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Section: Resultsmentioning

confidence: 68%

Photoemission cross section: A critical parameter in the impurity photovoltaic effect

et al. 2017

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“…According to Equation with N v from Green, this implies E T 1 lies in the range 0.144 eV to 0.150 eV. This is similar to the energy level for indium in silicon measured by other techniques …”

Section: Results and Analysismentioning

confidence: 99%

“…The challenge with the deployment of indium doped silicon arises from indium's relatively deep acceptor level, which optical measurements reveal to be at E V + 0.15 to E V + 0.16 eV . For shallow acceptors, such as boron, aluminium, and gallium, it is often reasonable to assume complete ionization at room temperature.…”

Section: Introductionmentioning

confidence: 99%

“…17 The challenge with the deployment of indium doped silicon arises from indium's relatively deep acceptor level, which optical measurements reveal to be at E V + 0.15 to E V + 0.16 eV. 9,[18][19][20][21] For shallow acceptors, such as boron, aluminium, and gallium, it is often reasonable to assume complete ionization at room temperature. With indium doping, this approximation is not valid, so not only does the doping level change with temperature, but the un-ionized indium has the potential to act as a recombination centre.…”

Section: Introductionmentioning

confidence: 99%

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Minority carrier lifetime in indium doped silicon for photovoltaics

Murphy

Pointon

Grant

et al. 2019

Progress in Photovoltaics

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For photovoltaics, switching the p‐type dopant in silicon wafers from boron to indium may be advantageous as boron plays an important role in the light‐induced degradation mechanism. With the continuous Czochralski crystal growth process it is now possible to produce indium doped silicon substrates with the required doping levels for solar cells. This study aims to understand factors controlling the minority carrier lifetime in such substrates with a view to enabling the quantification of the possible benefits of indium doped material. Experiments are performed using temperature‐dependent Hall effect and injection‐dependent carrier lifetime measurements. The recombination rate is found to vary linearly with the concentration of un‐ionized indium which exists in the sample at room temperature due to indium's relatively deep acceptor level at 0.15 eV from the valence band. Lifetime in indium doped silicon is also shown to degrade rapidly under illumination, but to a level substantially higher than in equivalent boron doped silicon samples. A window of opportunity exists in which the minority carrier lifetime in degraded indium doped silicon is higher than the equivalent boron doped silicon, indicating it may be suitable as the base material for front contact photovoltaic cells.

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“…The optical absorption in a reference energy was  widely used in the case of a-Si:H and even for has it a-Ge:H. This value of absorption can be directly correlated in the defect density, and the choice of the reference energy (in little meadows in the middle of the gap [11] or in the intersection of the exponential edge with the axis of the energies [12]) has no other purpose than to define a scale of comparison between the various samples. Among the authors who used this method, we quote in the case of a-Si:H, Yamasaki et al [13] who showed a good correlation between the density of spins measured by EPR and the coefficient of absorption measured by the PDS at an energy of 1.2 eV according to the relation:…”

Section: E Ementioning

confidence: 99%

Density of States in Intrinsic and n/p-Doped Hydrogenated Amorphous and Microcrystalline Silicon

Larbi¹,

Abdelkader²,

Sib³

et al. 2011

JMP

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Gap states in amorphous hydrogenated silicon (a-Si:H) doped and microcrystalline silicon doped n and p were examined by analysis of subgap absorption spectra obtained by the Constant Photocurrent Method (CPM) and the Photothermal Deflection Spectroscopy (PDS). Assuming a Gaussian distribution of defect states in the gap, broad distribution of states was found in a-Si:H and doped a-Si:H. A dependence of the defect concentration on Fermi energy was detected and analysed by thermodynamic model of defect formation in a-Si:H.

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Optical properties of indium-doped silicon reinspected

Cited by 17 publications

References 27 publications

Photoemission cross section: A critical parameter in the impurity photovoltaic effect

Photoemission cross section: A critical parameter in the impurity photovoltaic effect

Minority carrier lifetime in indium doped silicon for photovoltaics

Density of States in Intrinsic and n/p-Doped Hydrogenated Amorphous and Microcrystalline Silicon

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