Optical properties of laterally aligned Si nanowires for transparent electronics applications

Abstract

We have investigated the optical properties of laterally aligned Si nanowire (SiNW) arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of ~90% for a NW density of ~20−25 per 10 μm. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%−95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency (greater than 80%) and showed typical p-type SiNW transistor characteristics.

Transparent and Flexible Graphene Charge-Trap Memory

“…Minimum requirement for transparency for an active electronic element should be greater than 80% considering the transparency of a transparent electrode is nowadays above 90%. 32 Up to date, transparency ranging in 60À80% has been demonstrated in various transparent electronic modules; for example, semiconducting nanowires/nanotube transistors and logic gates (>80%), 4,5,33,34 wide bandgap transparent conducting oxide memory structures (∼80%), 35 organic light emitting diodes (∼70%), 36 and grid structured lithium-ion batteries (∼60%). 37 Our GCTM array shows transmittance over 80% in the visible-infrared regions, which is comparable to the most transparent active components.…”