Optical properties of single-crystalline α-Si3N4 nanobelts

Abstract

Articles you may be interested inSize dependent optical properties of Si quantum dots in Si-rich nitride/Si3N4 superlattice synthesized by magnetron sputtering Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO 2The optical properties of single-crystalline ␣-Si 3 N 4 nanobelts synthesized via catalyst-assisted pyrolysis of polymeric precursor were characterized by absorption, photoluminescence ͑PL͒ and photoluminescence excitation ͑PLE͒. The optical absorption spectrum showed that the nanobelts exhibited indirect absorption behavior with optical band gap of ϳ5.0 eV. Three broad peaks centered at 1.8, 2.3, and 3.0 eV were observed from the room-temperature PL spectrum of the nanobelts. The PLE spectra suggested the existence of multifold energy levels within the gap. A qualitative model was proposed to explain the observed absorption, PL and PLE spectra.

The effects of annealing temperature on the photoluminescence from silicon nitride multilayer structures

“…This PECVD system employs both radio frequency (RF) and microwave (MW) excitation at 13 employs a coaxial type surface waveguide with an inner conductor surrounded by a quartz tube. Two such antennae span the chamber in parallel.…”

“…There has also been recent interest in nanostructured a-Si 3 N 4 , in the form of nanobelts [12][13][14] and nanowires [15], for optoelectronic applications, which stems from observed room temperature PL. The PL mechanism for a-Si 3 N 4 nanostructures is also still unclear.…”

Kinetic study of the oxide‐assisted catalyst‐free synthesis of silicon nitride nanowires

“…Si 3 N 4 nanowires (Si 3 N 4 -NW) also exhibit enhanced mechanical [1,2] and novel electrical and optical properties [3]. Accordingly, several synthesis techniques have been developed.…”

Down-shifting Si-based layer for Si solar applications

“…9b) and theoretical energy transitions [42][43][44][45][46][47] that may thus be associated to specific electronic transitions, as reported on Fig. 10.…”