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Lastras‐Martínez, A.; Rodriguez-Pedroza, G; Mei, D. H.; Kramer, B.; Lubben, D.; Greene, J. E.

doi:10.1103/physrevb.43.14035

Phys. Rev. B

1991

DOI: 10.1103/physrevb.43.14035

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Optical-reflectance anisotropy in epitaxial metastable (GaAs)1−x(Si

A. Lastras‐Martínez¹,

G Rodriguez-Pedroza²,

D. H. Mei³

et al.

Abstract: Anisotropy in the above-band-gap optical reflectance along the [110] and [110] directions has been used to investigate long-range atomic ordering in metastable epitaxial (GaAs) & (Si~) (001) alloys as a function of Si concentration x. The amplitude of the differentiated reAectance-difference signal was found to decrease monotonically with increasing x and reach zero, corresponding to the critical concentration for the zinc-blendetodiamond transition, at x =0.37, consistent with x-raydiffraction results. The hi… Show more

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Cited by 11 publications

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“…From a comparison between the concentrations determined by HRXRD and SIMS the uncertainty in the values obtained from x-ray diffraction is estimated to be at most ⌬xϭ0.03 for the full range of concentrations. The value obtained for the critical concentration for this growth direction is in good agreement with that obtained from differential reflectance spectroscopy x c (001)Ϸ0.34, 12 and with previously reported results for other (III-V) 1Ϫx (IV 2 ) x metastable alloys also obtained by HRXRD, x c (001)Ϸ0.36 for (GaAs) 1Ϫx (Ge 2 ) x ͑Ref. 5͒ and x c (001)у0.30 for (GaSb) 1Ϫx (Ge 2 ) x .…”

supporting

confidence: 83%

Influence of growth direction on order-disorder transition in(GaAs)1−x(Si2

2001

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GaAs) 1Ϫx (Si 2 ) x metastable alloys were epitaxially grown on ͑001͒, ͑111͒, ͑110͒, and ͑112͒ GaAs. Singlecrystal alloys were obtained for Si concentrations in the range 0рxр0.43. At higher concentrations the Si segregated. The long-range order parameter, for each growth direction studied, was determined as a function of Si concentration by high-resolution x-ray diffraction. The behavior of this parameter with Si concentration is influenced by growth direction. This fact provides direct evidence that the substrate geometry affects the atomic ordering of these alloys. The results obtained from these alloys provide additional support to the validity of the proposal that the growth direction influences the order-disorder transition observed in other alloys of this kind.Several compounds of the (III-V) 1Ϫx (IV 2 ) x metastable alloys have been widely studied, due to their potential of tailoring the properties of III-V semiconductors, which may be useful for device applications. 1-5 Moreover, these alloys have been grown as model systems to study order disorder transitions, 1-5 where an ordered phase is associated to the zinc blende structure ͑III-V-like͒ and a disordered phase is associated to the diamond structure ͑IV-like͒. This order disorder transition exists at some intermediate value x c when IV atoms are increased in concentration from xϭ0 to xϭ1. [1][2][3][4][5] We have recently proved that the order disorder transition in (GaAs) 1Ϫx (Ge 2 ) x metastable alloys is influenced by growth direction and that the atomic ordering in these alloys is ruled mainly by the substrate geometry. 6,7 Our results ruled out the applicability of the thermodynamic models to our experimental data, since none of them predicted any different critical concentration for samples grown on differently oriented substrates. On the other hand, a model of the growth process based on Monte Carlo simulations gave results in good agreement with the experimentally observed longrange order ͑LRO͒ in (GaAs) 1Ϫx (Ge 2 ) x alloys, for all the studied growth directions. In our previous work, 6,7 we stated that quite likely the growth direction might affect the order disorder transition of similar (III-V) 1Ϫx (IV 2 ) x alloys, since when grown on ͑001͒ oriented substrates, different metastable alloys (GaAs) 1Ϫx (Ge 2 ) x , 1,5 (GaSb) 1Ϫx (Ge 2 ) x , 2 and (GaAs) 1Ϫx (Si 2 ) x ͑Ref. 4͒ have a similar critical concentration x c (001)Ϸ0.3 of the IV element. The growth of (III-V) 1Ϫx (IV 2 ) x metastable alloys, other than (GaAs) 1Ϫx (Ge 2 ) x , would give insight on the generality of our previous result, and the applicability of the growth model to other alloys of this kind. In addition, (GaAs) 1Ϫx (Si 2 ) x alloys may find applications as buffer layers for the growth of GaAs on Si. Undesirable effects induced by the large lattice mismatch between GaAs and Si may be reduced by growing a (GaAs) 1Ϫx (Si 2 ) x buffer layer of a graded Si concentration. On the other hand, the possible application of these alloys in semiconductor laser technology has been de...

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supporting

confidence: 83%

Influence of growth direction on order-disorder transition in(GaAs)1−x(Si2

2001

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The metastable phase transition of the alloy (GaAs)1−xSi2x and its electronic properties

1992

Solid State Communications

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Study of percolation and modeling of the order–disorder transition for zincblende–diamond structures: Percolation and the existence of a unique band of events

Ramirez-Gutierrez

Mosquera

Rodríguez‐García

2014

Computational Condensed Matter

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a b s t r a c tIn this paper, the dependence of the crystallographic direction in the critical concentration of IV-type atoms for the zincblendeediamond (orderedisorder) transition in (IIIeV)eIV semiconductor alloys were found for the (001), (110), and (111) growth directions by using Monte Carlo simulations. Intervals for the concentration values were determined by simulation, generating a band that is consistent with experimental data. Selecting the average value of this band produces good agreement with previous experimental results. It was also found that the relationship between order parameter and concentration does not have unique values and that there exists a band of events. The existence of this band can explain the scatter in the experimental data reported in x-ray, Raman, and optical anisotropy. It was found that the site percolation threshold is independent of the crystallographic direction of growth and converges to a single concentration value x z 0.437.

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Optical-reflectance anisotropy in epitaxial metastable (GaAs)1−x(Si

Cited by 11 publications

References 25 publications

Influence of growth direction on order-disorder transition in(GaAs)1−x(Si2

Influence of growth direction on order-disorder transition in(GaAs)1−x(Si2

The metastable phase transition of the alloy (GaAs)1−xSi2x and its electronic properties

Study of percolation and modeling of the order–disorder transition for zincblende–diamond structures: Percolation and the existence of a unique band of events

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