Optical refraction index and polarization profile of ferroelectric thin films

Glinchuk, M. D.; Eliseev, Eugene A.; Deineka, A.; Jastrabı́k, L.; Suchaneck, G.; Sandner, T.; Gerlach, Gerald; Hrabovský, M.

doi:10.1080/10584580108016922

Cited by 14 publications

(12 citation statements)

References 15 publications

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“…Estimations show that the renormalization of ␣ and ␤ by misfit strain u m for LSMO/STO and LSMO/BFO heterostructures is important for thin films with thickness smaller than the critical thickness of misfit dislocations 2-10 nm and becomes negligibly small for ferroelectric films with thickness more than several dozens of nm ͑see Table II͒. Extrapolation lengths i and interface charge S values are not listed in the Table I since they strongly depend on the interfacial states. Extrapolation length values could be extracted from the polarization distribution in ferroelectric nanosystems ͑films, wires, etc.͒ obtained either experimentally 42,43 or determined by the first-principles calculations. 19,20 Extremely small and extremely high values of extrapolation lengths describe the two limiting cases of the surface-energy contribution to the total free energy.…”

Section: ͑12͒mentioning

confidence: 99%

“…LGD-expansion coefficients for ferroelectrics LaSrMnO 3 (LSMO) half-metal ε S = 30 [27] 1.83 10 22 [28] 1.65 10 21 [29] (La 0.7 Sr 0.3 MnO 3 ) 1 p-type [30,31] Non ferroelectric BiFeO 3 (BFO) ferroelectric Extrapolation lengths λ i and interface charge σ S values are not listed in the table, since they strongly depend on the interfacial states. Extrapolation length values could be extracted from the polarization distribution in ferroelectric nanosystems (films, wires, etc) obtained either experimentally [33,34] or determined by the first principle calculations [19,20]. Extremely small and extremely high values of extrapolation lengths describe the two limiting cases of the surface energy contribution to the total free energy.…”

Section: Band Gap (Ev)mentioning

confidence: 99%

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Finite size and intrinsic field effect on the polar-active properties of ferroelectric-semiconductor heterostructures

et al. 2010

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Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization, and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles, and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal ͑caused by the electric field of the nanosized tip of the scanning probe microscope͒ the thickness and charge of the interface layer drastically changes, in particular, the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport.

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Section: ͑12͒mentioning

confidence: 99%

Section: Band Gap (Ev)mentioning

confidence: 99%

Finite size and intrinsic field effect on the polar-active properties of ferroelectric-semiconductor heterostructures

et al. 2010

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“…The extrapolation length should be obtained from the independent measurements, e.g. from the pyroelectric current spectrum [16]. The dependence of the ratio E m (h)/E S over film thickness h is represented in Fig.…”

Section: Polarization and Hysteresis Loopsmentioning

confidence: 99%

The Influence of Mismatch-Induced Field on Thin Ferroelectric Film Size Effects

Glinchuk

Morozovska

Eliseev

2004

Integrated Ferroelectrics

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The influence of the mismatch effect on the thin ferroelectric film properties has been studied in phenomenological theory framework. The polarization-dependent part of surface energy was expressed via surface polarization and tension tensor related to mismatch of a substrate and a film lattice constants and thermal expansion coefficients. The interfacial strain caused by the mismatch effect induces the additional surface polarization P m via piezoelectric effect that exists near the surface in any film. P m causes mismatch-induced thickness dependent internal electric field E m which influences drastically all the film properties. In particular the polarization profile and hysteresis loop become asymmetrical, polarization temperature dependence resembles the one in the external electric field, and there is possibility of external field screening by the field E m . The obtained results make it possible to suppose that mismatch effect could be the physical reason of the ferroelectric phase conservation in ultrathin film.

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“…2. According to theoretical prediction (Glinchuk et al, 2000), the behavior of polarization profile changes considerable for very thin PZT films. This is illustrated in Fig.…”

Section: Modeling Of Depth Profilementioning

confidence: 99%

“…Its calculation can be performed on the base of phenomenological theory with polarization gradient in free energy density Glinchuk et al, 2000;Tilley, Gordon and Breach, Amsterdam, 1996;Wang et al, 1995;. It was found (Glinchuk et al, 2000) that dielectric susceptibility is also inhomogeneous and it can be calculated, for example, on the base of Lame equation. As a matter of the fact obtained polarization P(z) profile is related to that of optical refraction index: 1/n 2 ~ (1/n 0 2 ) (1 + P(z) 2 ).…”

Section: Modeling Of Depth Profilementioning

confidence: 99%