Optical response of a bilayer crystal

Dell’Anna, Luca; Merano, Michele

doi:10.1103/physreva.99.013802

Cited by 7 publications

(2 citation statements)

References 25 publications

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“…Beam shifts also have the potential to characterize multilayer 2D atomic crystals with interlayer interactions (no twist), such as bilayer boron nitride with interlayer [149]. When this spacing is of the same order of magnitude as the lattice spacing of the atoms, the interlayer interaction is not negligible and will be reflected in the Fresnel coefficients, which allows it to be measured by beam shifts.…”

Section: Identifying the Layer Numbers Of Few-layer Graphenementioning

confidence: 99%

Beam shifts in two-dimensional atomic crystals

Ling¹,

Zhang²,

Chen³

et al. 2021

J. Phys. D: Appl. Phys.

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Optical beam shifts, which mainly refer to the Goos–Hänchen shift and spin-Hall shift, widely exist in basic optical processes such as interface reflection and refraction. They are very sensitive to changes in the parameters of the materials that constitute the interface and therefore show great potential for applications in precision metrology and sensing. The interaction between light and two-dimensional (2D) atomic crystals is very weak, and beam shifts provide an alternative approach to explore and characterize 2D atomic crystals. In this paper, we first present a full-wave theory of beam shifts and introduce the experimental measurement of beam displacements with quantum weak measurement technology, and then review their applications in characterizing 2D atomic crystals, such as determining the layer number and measuring the optical conductivity of few-layer graphene. Finally, we discuss the beam displacements in twisted bilayer 2D atomic crystals and 2D atomic crystals under applied electric or magnetic fields.

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Section: Identifying the Layer Numbers Of Few-layer Graphenementioning

confidence: 99%

Beam shifts in two-dimensional atomic crystals

Ling¹,

Zhang²,

Chen³

et al. 2021

J. Phys. D: Appl. Phys.

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“…Bi

SeO

is a layered material that was grown as a native oxide on the layered Bi

Se [ 41 ]; however, it remains unclear how it would be grown on other materials. Consequently, more research needs to be conducted, and delicate experimental methods should be employed to measure and verify the actual performance of the 2D vdW materials and their optical and dielectric properties [ 43 , 44 , 45 ].…”

Section: Introductionmentioning

confidence: 99%

A First-Principles Study on the Electronic, Thermodynamic and Dielectric Properties of Monolayer Ca(OH)2 and Mg(OH)2

2022

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We perform first-principles calculations to explore the electronic, thermodynamic and dielectric properties of two-dimensional (2D) layered, alkaline-earth hydroxides Ca(OH)2 and Mg(OH)2. We calculate the lattice parameters, exfoliation energies and phonon spectra of monolayers and also investigate the thermal properties of these monolayers, such as the Helmholtz free energy, heat capacity at constant volume and entropy as a function of temperature. We employ Density Functional Perturbation Theory (DFPT) to calculate the in-plane and out-of-plane static dielectric constant of the bulk and monolayer samples. We compute the bandgap and electron affinity values using the HSE06 functional and estimate the leakage current density of transistors with monolayer Ca(OH)2 and Mg(OH)2 as dielectrics when combined with HfS2 and WS2, respectively. Our results show that bilayer Mg(OH)2 (EOT∼0.60 nm) with a lower solubility in water offers higher out-of-plane dielectric constants and lower leakage currents than does bilayer Ca(OH)2 (EOT∼0.56 nm). Additionally, the out-of-plane dielectric constant, leakage current and EOT of Mg(OH)2 outperform bilayer h-BN. We verify the applicability of Anderson’s rule and conclude that bilayers of Ca(OH)2 and Mg(OH)2, respectively, paired with lattice-matched monolayer HfS2 and WS2, are effective structural combinations that could lead to the development of innovative multi-functional Field Effect Transistors (FETs).

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Large cross-polarization rotation of light on graphene

Liu

Chen

Luo

et al. 2021

Applied Physics Letters

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A large cross-polarization (CP) rotation of light is found on the graphene surface experimentally and applied to measuring the layer number of graphene. First, a general propagation model for the polarization of light reflected on the graphene is established. By using this model, it is found that the CP effect rotates remarkably with the incident polarization near the pseudo-Brewster angle. More importantly, such a rotation differs noticeably for graphene surfaces with distinct layers, thereby providing a simple and efficient approach to detect the graphene layer number. Finally, the CP rotation is shown to be accompanied by the rotation of the spin Hall effect of light. Further experiments are performed to validate the theoretical results.

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Optical response of a bilayer crystal

Cited by 7 publications

References 25 publications

Beam shifts in two-dimensional atomic crystals

Beam shifts in two-dimensional atomic crystals

A First-Principles Study on the Electronic, Thermodynamic and Dielectric Properties of Monolayer Ca(OH)2 and Mg(OH)2

Large cross-polarization rotation of light on graphene

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