Optical Spectroscopic Studies of N-Related Bands in Ga(N,As)

MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors

“…Introducing already small amounts of N (40.5%) to GaAs and (GaIn)As results in a dramatic change in the electronic band-structure of the host materials. These changes manifest themselves in the experimentally observed and theoretically described N-induced formation of two new conduction bands, one of which is significantly redshifted compared to the original conduction band-edge of (GaIn)As [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. As a consequence of this lowering of the conduction band-edge due to nitrogen, it is possible to achieve 1.3 mm as well as 1.55 mm emission on GaAs substrates using (GaIn)(NAs) as active material [15][16][17][18][19][20][21][22][23][24][25][26].…”

Spatially resolved electronic structure of an isovalent nitrogen center in GaAs

“…Thus, unlike for nitrogen in GaP, the resonance level of a single nitrogen lies in the conduction band of GaAs. Additional narrow lines have been found in the photoluminescence spectra, and assigned to other states involving the single nitrogen, N-N pairs, and N clusters, several of which are situated in the band gap [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21].…”

Evolution of superclusters and delocalized states in GaAs1−xNx

“…1(d), follow a smooth trend that is consistent with previously published absorption, PLE and ER data. 6,7,10 By contrast, the time integrated PL emission spectra measured under pulsed excitation shown in For low pulsed excitation intensities (ultrafast Ti:sapphire laser, 1 μJ/cm 2 ), carriers quickly thermalize to N cluster bound states, and emission originates mainly from excitons localized at these states. Photogeneration of non-equilibrium carriers under high pulsed excitation intensities (20 μJ/cm 2 ) is necessary to populate the higher-lying extended states.…”