Optical study of MeV energy heavy ion-induced effects in crystalline germanium and silicon

Bhatia, K.L.; Singh, Priya; Singh, Mahender; Kishore, N.; Mehra, N. C.; Kanjilal, D.

doi:10.1016/0168-583x(94)95412-7

Cited by 24 publications

(2 citation statements)

References 20 publications

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“…5), which indicates the sample surface amorphization and the formation of porous layer Ag : PGe, as was previously studied in detail in the work [9]. The effect of reflection decreasing upon surface amorphization of Ge implanted with Ni + and O + ions was discovered in the works [10,11], respectively. The sample darkening, known in the literature as " black Ge", occurs due to increase in Rayleigh scattering by the Ag : PGe nanoporous structure, which also leads to decrease in optical reflection [12].…”

Section: Resultsmentioning

confidence: 59%

Change in the surface state of the single-crystal germanium as a result of implantation with silver ions and annealing with light pulses

et al. 2022

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Single-crystal c-Ge plates implanted with Ag+ ions with an energy of E=30 keV, current density of the ion beam J = 5 μA/cm2 and a dose of D = 2.5· 1016 ion/cm2 were subjected to rapid thermal annealing by single light pulses of various durations from 1 up to 9.5 s. By scanning electron microscopy and optical reflection spectroscopy measurements it was shown that after ion implantation an amorphous porous Ag : PGe layer of spongy structure, consisting of Ge nanowires, is formed on the surface of c-Ge substrates. It was found that the annealing with an increase in the pulse duration up to 5 s successively leads to an increase in the Ge nanowire diameters from 26 to 35 nm. With longer pulses, the porous Ag : PGe structure is destroyed and Ag evaporates from the implanted layers. Keywords: nanoporous germanium, ion implantation, rapid thermal annealing.

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Section: Resultsmentioning

confidence: 59%

Change in the surface state of the single-crystal germanium as a result of implantation with silver ions and annealing with light pulses

et al. 2022

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“…2). An integral suppression of reflection after amorphization of the surface of Ge implanted with 59 Ni + ions was also observed the work [19], although the Ge surface morphology wherein was found to remain unchanged. Therefore, it could be note an additional crucial reason for the redaction of In:PGe reflection: intense Rayleigh scattering of light by microstructures that, as was discussed the papers [7][8][9][10], leads to darkening of the sample.…”

Section: A "mentioning

confidence: 52%

Creation of an antireflection coating for the optical range based on a nanoporous germanium layer formed by implantation with indium ions

Степанов

Нуждин

Валеев

et al. 2023

Technical Physics Letters

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The possibility of using a nanoporous Ge layer formed by implantation with 115In+ ions on a monocrystal c-Ge substrate as an antireflection optical coating (In:PGe) was studied. For this purpose, ion implantation of c-Ge wafers was performed at an energy E=30 keV, current density in the ion beam J=5 μA/cm2, and dose D=1.8· 1016 ion/cm2. It was shown that the fabricated In:PGe spongy layer, which consists of intertwining Ge nanowires, is characterized by a low reflectivity (~ 5%) in a wide optical spectral range of 250-1050 nm. Keywords: nanoporous germanium, ion implantation, antireflection optical coating.

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Doping of chalcogenide glassy semiconductor by implanting Ni ions

Singh¹,

Bhatia²,

Kishore³

et al. 1995

Journal of Non-Crystalline Solids

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Optical study of MeV energy heavy ion-induced effects in crystalline germanium and silicon

Cited by 24 publications

References 20 publications

Change in the surface state of the single-crystal germanium as a result of implantation with silver ions and annealing with light pulses

Change in the surface state of the single-crystal germanium as a result of implantation with silver ions and annealing with light pulses

Creation of an antireflection coating for the optical range based on a nanoporous germanium layer formed by implantation with indium ions

Doping of chalcogenide glassy semiconductor by implanting Ni ions

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