Optical study of ultrathin SiO2 grown on hydrogenated silicon

Effect of Grown-In Defects on the Structure of Oxygen Precipitates in Cz-Si Crystals with Different Diameter

“…It is not excluded that such complexes exist in the Si crystal network independently. However, recent investigation of silicon -thin (10-15 nm) thermal oxide systems by IR spectroscopy and spectral ellipsometry [17], has revealed the existence of such complexes in the interfacial Si-SiO 2 layer. It can be concluded, that in the case of developed oxygen precipitates in Cz-Si the molecular complexes Si-O 2 -Si 2 are most likely localized in the interfacial regions of the silicon -precipitate.…”

Electron states at the Si-SiO2 boundary (Review)

“…As it was ascertained in [50], where oxygen films with the thickness 2.4 nm were studied, the thickness of suboxide layer was only 0.2 nm, i.e., the boundary between Si and SiO 2 is close to the very sharp one. These suboxides consist of Si-O x -Si 4−x type silicon-oxygen clusters (1 ≤ x < 4) [51] that possess angles in bridge Si-O-Si bonds less than those between silicon-oxygen tetrahedra in SiO 2 bulk, which manifests itself in red-shifted bands observed in IR spectra.…”

“…These strains in the silicon substrate are sufficient, at least, to create point defects at the silicon boundary and enhance this process when applying high electric voltages to the Si-SiO 2 structure or exposing it to various kinds of radiation [61,62]. It is noteworthy that from the analysis of possible conjugation between Si and SiO 2 lattices as well as from experimental data [51], it follows that IMS at the boundary Si(111)-SiO 2 are higher than those at the Si(100)-SiO 2 boundary. As a consequence, there observed a larger amount of created point defects of the P b center type on the silicon surface with (111) orientation [22].…”

Oxidation of hydrogenated crystalline silicon as an alternative approach for ultrathin SiO2growth

“…The pre-oxidation conditions of the Si surface play a decisive role and, hence, will influence the growth kinetics of thin SiO 2 layers and their dielectric properties. Recently we have applied a radio frequency (rf) hydrogen plasma treatment as a Si pre-oxidation cleaning procedure aiming at growth of high quality thin SiO 2 layers at lower oxidation temperatures through incorporation of hydrogen into SiO 2 during the oxidation by hydrogenation of the near surface region of Si [3][4][5].…”