Optical tools and techniques for failure analysis of modern integrated circuits

Cole, Edward I.; Bruce, Mike; Barton, Daniel L.; Tangyunyong, Paiboon; Bruce, Victoria J.; Hawkins, C.F.; Soden, J.M.; Henderson, C.L.; Ring, Rosalinda M.; Chong, Wu; Eppes, David; Wilcox, J. R.; Benson, David A.

doi:10.1109/leos.2003.1252911

Cited by 3 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the case of the light-induced voltage alteration (LIVA) technique, the device is placed in either a forward or reverse biased configuration with a constant-current power supply. While biased, the device is locally illuminated with a raster-scanning laser beam that has a wavelength above the silicon band gap [4]. As the laser beam is scanned across the device, it interacts with the sample by creating electron-hole pairs and generating photo-current near electrical junctions.…”

Section: Failure Analysis Techniques Overviewmentioning

confidence: 99%

“…Thermally-induced voltage alteration (TIVA) is similar to LIVA, except that the wavelength of the laser is below the band gap. As such, the laser no longer generates electron-hole pairs but will instead locally heat the laser-illuminated areas [4]. The resulting "induced voltage" or TIVA images can nondestructively identify low-resistance current leakage paths or areas of thermocouple-like activity in the device.…”

Section: Failure Analysis Techniques Overviewmentioning

confidence: 99%

See 1 more Smart Citation

Fault localization and failure modes in microsystems-enabled photovoltaic devices

Yang¹,

Cruz‐Campa²,

Haase³

et al. 2013

2013 IEEE International Reliability Physics Symposium (IRPS)

Self Cite

View full text Add to dashboard Cite

Microsystems-enabled photovoltaic (MEPV) technology is a promising approach to lower the cost of solar energy to competitive levels. This paper describes current development efforts to leverage existing silicon integrated circuit (IC) failure analysis (FA) techniques to study MEPV devices. Various FA techniques such as light emission microscopy and laser-based fault localization were used to identify and characterize primary failure modes after fabrication and packaging. The FA results provide crucial information used in provide corrective actions and improve existing MEPV fabrication techniques.

show abstract

Section: Failure Analysis Techniques Overviewmentioning

confidence: 99%

Section: Failure Analysis Techniques Overviewmentioning

confidence: 99%

Fault localization and failure modes in microsystems-enabled photovoltaic devices

Yang¹,

Cruz‐Campa²,

Haase³

et al. 2013

2013 IEEE International Reliability Physics Symposium (IRPS)

Self Cite

View full text Add to dashboard Cite

show abstract

Study on light sensitive functional failures in VLSI failure analysis

Wen¹,

Fan²,

Liu³

et al. 2013

Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

View full text Add to dashboard Cite

Functional failures which were sensitive to temperature or voltage were usually seen in failure analysis and many strategies have been employed to solve this kind of failure. But some special failed ICs which were sensitive to light post decapsulation were difficult to handle. Three light sensitive functional failure cases were presented in this paper to show how we can find the root cause efficiently and what kind of mechanism lead to them sensitive to light.

show abstract